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Etching solution and etching method for general resistive silicon products

A kind of etching solution and product technology, applied in the field of semiconductor preparation, can solve the problems of great impact on human health, easy generation of air bubbles, large environmental pollution, etc., and achieve the effect of uniform and not violent reaction, consistent roughness, and consistent effect before etching

Active Publication Date: 2021-10-15
CHONGQING GENORI IND CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The original etching solution is prepared from hydrofluoric acid, nitric acid, acetic acid and water. The use of high-concentration and highly corrosive strong acids will have a great impact on the health of the operator during the preparation process, and the toxic gas produced will affect the environment. Large pollution, and at the same time, the amount of etching is small within a certain period of time, the efficiency is low, and the reaction is violent and easy to generate bubbles

Method used

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  • Etching solution and etching method for general resistive silicon products
  • Etching solution and etching method for general resistive silicon products
  • Etching solution and etching method for general resistive silicon products

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0046] The etchant for general resistivity silicon products is composed of the following substances in terms of mass percentage:

[0047]

[0048]Solution preparation method: Weigh the required ammonium bifluoride according to the proportion, add an appropriate amount of water to dissolve, then slowly add potassium nitrate, phosphoric acid, sulfuric acid and ammonium persulfate according to the amount, stir evenly, cool to room temperature, and then add polyethylene glycol Alcohol and propylene glycol block polyether, and finally add the balance of water to make up the volume. It is preferable to use ultrapure water of 18MΩ.cm.

[0049] Etching method: heat the solution to 30°C, put the product into the solution, rotate at a constant speed, the etching time is 3 minutes, and the etching amount can reach 0.04mm. It is worth noting that the etching amount of our products can meet the production requirements at 0.04mm. If other products need to increase the etching amount, yo...

Embodiment 2

[0058] An etchant for general resistive silicon products is composed of the following substances in terms of mass percentage:

[0059]

[0060] Solution preparation method and etching method are the same as embodiment 1.

[0061] Figure 10 It is the appearance diagram of the sample after etching in this embodiment, the surface is fine and uniform, and there are no bubble points.

Embodiment 3

[0063] The etchant of general resistive silicon products is composed of the following substances in terms of mass percentage:

[0064]

[0065] Solution preparation method and etching method are the same as embodiment 1. Figure 11 This is the appearance diagram of the sample after etching in this embodiment. The surface of the sample after etching is fine and uniform, without bubble points, and without color difference.

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Abstract

The invention relates to an etching solution for general resistance silicon products, which is composed of ammonium bifluoride, potassium nitrate, sulfuric acid, ammonium persulfate, polyethylene glycol, phosphoric acid and propylene glycol block polyether aqueous solution. According to the characteristics of general resistive silicon products, the traditional etching solution prepared with high-concentration and highly corrosive hydrofluoric acid, nitric acid, acetic acid, and water is improved, and a certain amount of HF can be produced at a certain rate when the appropriate ratio of ammonium bifluoride and sulfuric acid is used. , and a small amount of potassium nitrate, ammonium persulfate, and phosphoric acid for etching. Reduces mottle or chromatic aberrations from incomplete or uneven etch. The reaction is uniform and moderate, and the roughness is the same as before etching, without increasing the roughness.

Description

technical field [0001] The invention belongs to the technical field of semiconductor preparation, and relates to an etching solution for general resistance silicon products and an etching method thereof. Background technique [0002] Semiconductors now account for a large portion of the world economy and have a huge influence on economic growth. Semiconductor technology is developing at an ever-changing speed. Now the 12-inch wafer semiconductor production process is produced in China, and China is the largest semiconductor consumer in the world no matter compared with any semiconductor manufacturing country in the world. [0003] However, with the development of semiconductor technology, the ever-expanding wafers also begin to require highly integrated and high-precision circuits. In the semiconductor slicing production process using silicon wafers as raw materials, equipment accessories that affect circuit integration need to be used with wafers. The raw material is the s...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C09K13/08H01L21/306
CPCC09K13/08H01L21/30604
Inventor 王燕清
Owner CHONGQING GENORI IND CO LTD
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