Photosensitive resin composition and photoresist

A technology of photosensitive resin and composition, applied in the field of photosensitive materials, can solve the problem that photosensitive resin cannot have high adhesion and developability, and achieve the effects of improving reactivity and curing rate, improving developability and solvent resistance.

Pending Publication Date: 2021-03-30
CHANGZHOU TRONLY NEW ELECTRONICS MATERIALS +2
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The main purpose of the present invention is to provide a photosensitive resin composition and photoresist to solve the problem that the photosensitive resin in the prior art cannot have both high adhesion and high developability

Method used

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  • Photosensitive resin composition and photoresist
  • Photosensitive resin composition and photoresist
  • Photosensitive resin composition and photoresist

Examples

Experimental program
Comparison scheme
Effect test

Synthetic example

[0050] Synthesis example: Preparation of photosensitive resin

[0051] intermediate synthesis

[0052] Put 500g of intermediate I (9,9-bis[4-(2,3-epoxypropoxy)phenyl]fluorene) into a 2000ml four-necked flask, 160g of acrylic acid, and then add 0.5g of p-methoxyphenol And 5.6g tetraethyl ammonium bromide, then continue to add 400g PMA (propylene glycol methyl ether acetate, Propylene Glycol Methyl Ether Acetate), feed air bubbling in four-necked flask, start stirring, form reaction system, then The reaction system was gradually warmed up to 120°C, and reacted for 8 hours. During the reaction, the acid value was controlled centrally. After the acid value no longer changed, the reaction was completed, and the intermediate II (9,9-bis[4-(2-hydroxy- 3-acryloyloxypropoxy)phenyl]fluorene) product system, add PMA until the solid content reaches 55%, and then filter with an organic filter membrane with a pore size of 0.45 μm to obtain the PMA solution of the intermediate II.

[005...

Embodiment a-1

[0062] Add 1200g of the PMA solution of intermediate II to a 2000ml four-necked flask, continue to add 192.1g of 3,3',4,4'-biphenyltetracarboxylic dianhydride (BPDA), start stirring to form a reaction system, and pour into the four-necked flask Dry air was passed through the medium, and then the reaction system was heated to 105° C. and stirred for 12 hours. During this period, the reaction of the anhydride was detected by infrared, and the peak of the anhydride was no longer reduced. After adding 75 g of tetrahydrophthalic anhydride into the four-necked flask, the reaction was kept at 80° C. for 6 hours, during which time the consumption of the anhydride was detected by infrared. Then, add PMA to adjust the solid content of the system to 50%, cool down to about 70°C, and discharge. While hot, use a 0.8 μm membrane to filter out mechanical impurities to obtain photosensitive resin A1. The weight-average molecular weight of the resin obtained by GPC measurement is 6315, (the w...

Embodiment a-2

[0064] The formula is similar to that of Example a-1, the quality of the added 3,3',4,4'-biphenyltetracarboxylic dianhydride (BPDA) is adjusted to 208.1g, the preparation method is the same as that of Example a-1, and the obtained resin The weight average molecular weight is 6912, the acid value is 106mgKOH / g, named as photosensitive resin a-2.

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Abstract

The invention provides a photosensitive resin composition and a photoresist. The photosensitive resin composition comprises resin, and the resin comprises at least two kinds of photosensitive resin, wherein the two kinds of photosensitive resin independently have the structure shown in the structural formula I, one kind of photosensitive resin is high-molecular-weight photosensitive resin, the weight-average molecular weight of the photosensitive resin is 6,300-7,800, and the weight-average molecular weight of the photosensitive resin is 5,000-5,500; the structural formula I is shown in the specification, and the photosensitive resin with the structural formula I has the photocuring performance, wherein the adhesiveness to a substrate, the alkali solvent resistance and the solvent resistance are high; and the two photosensitive resins with the advantages are compounded, so the molecular weight of each photosensitive resin is further controlled; the resolution and the adhesive force canbe improved by utilizing the high molecular weight photosensitivity, and the developability is improved and the residual film rate is reduced by utilizing the low molecular weight photosensitive resin, so a black matrix with high sensitivity and uniform CD can be prepared.

Description

technical field [0001] The invention relates to the technical field of photosensitive materials, in particular to a photosensitive resin composition and a photoresist. Background technique [0002] Color filters such as color liquid crystal displays require light-blocking layers on the boundaries between color layers such as red, green, and blue to improve display contrast or chromophore effects. effect), and the light blocking layer is mainly formed of a photosensitive resin composition. Such a light blocking layer material can be used as a black matrix photoresist material supported between two TFT and C / F substrates interposed by a liquid crystal layer. [0003] The general process of making a black matrix photoresist material by photolithography is: cleaning the transparent glass substrate, then coating the photoresist on the glass substrate, performing vacuum drying (VCD), removing the edge photoresist, and pre-baking the coated glass Baking, use an exposure machine t...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F7/004G03F7/027
CPCG03F7/004G03F7/027
Inventor 钱晓春施大峰葛庆余马培培
Owner CHANGZHOU TRONLY NEW ELECTRONICS MATERIALS
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