Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Deep ultraviolet light emitting diode and method of making the same

A light-emitting diode and deep ultraviolet technology, which is applied in semiconductor devices, electrical components, circuits, etc., can solve the problems of unsatisfactory deep ultraviolet LED epitaxy quality, low quantum efficiency, and restricting the performance of deep ultraviolet LED chips, so as to improve the effect of current expansion Effect

Active Publication Date: 2022-07-29
HANGZHOU SILAN AZURE +1
View PDF7 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, the quantum efficiency of deep ultraviolet LED products is very low, generally no more than 10%, and there is a big gap compared with blue-green LED products. The quantum efficiency is low; secondly, P-GaN is used as the ohmic contact, and there is a serious phenomenon of deep ultraviolet light absorption; thirdly, with the increase of the Al composition in the quantum well, the light emitted by the deep ultraviolet LED is in the TM-Transverse Magnetic transverse magnetic mode (parallel Based on the light-emitting surface), it is difficult for TM light to enter the escape cone of the light-emitting surface and exit the LED device. The light extraction efficiency of TM is only one tenth of the light extraction efficiency of TE-Transverse electrical mode
These problems seriously restrict the performance improvement of deep ultraviolet LED chips

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Deep ultraviolet light emitting diode and method of making the same
  • Deep ultraviolet light emitting diode and method of making the same
  • Deep ultraviolet light emitting diode and method of making the same

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0072] The present invention will be described in more detail below with reference to the accompanying drawings. In the various figures, like elements are designated by like reference numerals. For the sake of clarity, various parts in the figures are not drawn to scale. Additionally, some well-known parts may not be shown. For the sake of simplicity, the semiconductor structure obtained after several steps can be depicted in one figure.

[0073] It will be understood that, in describing the structure of a device, when a layer or region is referred to as being "on" or "over" another layer or region, it can be directly on the other layer or region, or Other layers or regions are also included between it and another layer, another region. Also, if the device is turned over, the layer, one region, will be "under" or "under" another layer, another region.

[0074] In order to describe the situation directly above another layer, another area, the expression "directly on" or "on...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

A deep-ultraviolet light-emitting diode and a manufacturing method thereof are disclosed. The deep-ultraviolet light-emitting diode includes an epitaxial layer, and the epitaxial layer includes a first semiconductor layer, a multi-quantum well layer and a second semiconductor layer, wherein the epitaxial layer includes a first step, and the second semiconductor layer includes a first step. One step surface of one step is the surface of the second semiconductor layer, the sidewall of the first step is the multiple quantum well layer and the sidewall of the second semiconductor layer, and the other step surface of the first step is the surface of the first semiconductor layer; The first ohmic contact layer is in contact with the first semiconductor layer; the second ohmic contact layer is in contact with the second semiconductor layer. In the present application, a first step with an array distribution is formed in the epitaxial layer of the deep ultraviolet light emitting diode, and a roughened surface is formed on the side wall of the first step to increase the area ratio of the side wall of the deep ultraviolet light emitting diode, thereby improving the deep ultraviolet light emitting diode. light extraction efficiency.

Description

technical field [0001] The invention relates to the technical field of semiconductor chips, in particular to a deep ultraviolet light emitting diode and a manufacturing method thereof. Background technique [0002] In recent years, the application of deep ultraviolet LED (light emitting diode) has shown explosive growth. Deep ultraviolet rays have a broad-spectrum bactericidal effect on various germs. Airborne pathogenic microorganisms such as influenza viruses (flu), rhinoviruses (common cold) and more dangerous pathogens (coronaviruses, etc.) are responsible for many diseases. Deep ultraviolet rays can not only directly kill bacteria on the surface of objects, but also penetrate air and water to kill bacteria in them, which has a very wide range of application scenarios. [0003] However, deep ultraviolet LED products still face serious problems, and related technologies still need to be significantly improved. At present, the quantum efficiency of deep ultraviolet LED ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/18H01L33/14H01L33/24H01L33/44H01L33/46
CPCH01L33/18H01L33/14H01L33/24H01L33/44H01L33/46
Inventor 范伟宏李东昇张晓平马新刚高默然赵进超
Owner HANGZHOU SILAN AZURE
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com