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Method for enhancing photoluminescence signal of antimony-based superlattice material

A photoluminescence, superlattice technology, applied in sustainable manufacturing/processing, electrical components, climate sustainability, etc., can solve the problem of difficulty in determining the luminescence peak position of the superlattice material band gap, and the photoluminescence signal is not obvious. , reduce the photoluminescence signal and other problems, achieve the effect of clear luminescence peak and peak position, improve detection accuracy, and enhance the photoluminescence signal

Active Publication Date: 2021-03-16
11TH RES INST OF CHINA ELECTRONICS TECH GROUP CORP
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Problems solved by technology

However, the surface recombination of Sb-based superlattice materials is serious, which weakens the photoluminescence signal, resulting in inconspicuous photoluminescence signals, and it is difficult to determine the position of the luminescence peak and the band gap of the superlattice material.

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  • Method for enhancing photoluminescence signal of antimony-based superlattice material
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  • Method for enhancing photoluminescence signal of antimony-based superlattice material

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Embodiment Construction

[0028] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, not all, embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0029] Such as figure 1 As shown, the method for enhancing the photoluminescence signal of Sb-based superlattice material provided by the present invention comprises the following steps:

[0030] In step 101, the GaSb substrate is pretreated to remove water vapor and organic matter. In this step, a GaSb (100) substrate is used as the GaSb substrate. The GaSb(100) substrate is loaded into the sample chamber of the molecular beam epitaxy system (MBE), and afte...

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Abstract

The invention discloses a method for enhancing a photoluminescence signal of an antimony-based superlattice material. The method comprises the steps: preprocessing a GaSb substrate to remove water vapor and organic matters; heating the GaSb substrate, and removing the oxide layer of the GaSb substrate at a high temperature; cooling the GaSb substrate, and growing a GaSb buffer layer on the GaSb substrate; heating the GaSb buffer layer and then carrying out annealing treatment; cooling the GaSb buffer layer, and growing the Sb-based superlattice material on the GaSb buffer layer by controllingthe growth temperature, the growth rate, the beam ratio and the growth interface; and growing a GaSb layer on the surface of the Sb-based superlattice material, cooling and taking out the Sb-based superlattice material. According to the invention, the photoluminescence test is carried out on the Sb-based superlattice material, so that the photoluminescence signal is greatly enhanced, the peak position of the luminescence peak is clear, the half-peak width is small, the band gap of the superlattice material can be accurately tested, the Sb-based superlattice material can be widely applied to infrared photoelectric devices, and the detection precision of the infrared photoelectric devices is improved.

Description

technical field [0001] The invention relates to the technical field of semiconductor infrared detectors, in particular to a method for enhancing photoluminescent signals of Sb-based superlattice materials. Background technique [0002] Infrared thermal imaging has the characteristics of strong anti-interference, long recognition distance, and thermal radiation detection. In recent years, it has been widely used in the fields of security, industry, medicine, and automatic driving. [0003] Infrared optoelectronic devices use a wide range of materials, metals, insulators and superconductors can be used to make infrared detectors. Among them, the special physical properties of antimony (symbol "Sb")-based superlattice materials are very suitable for the manufacture of infrared optoelectronic devices. Sb-based superlattice infrared detectors can respond to light radiation from near-infrared to short-wave infrared, medium-wave infrared, long-wave infrared and far-infrared throug...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18H01L31/0304H01L31/0352H01L31/102
CPCH01L31/184H01L31/1844H01L31/0304H01L31/03046H01L31/035236H01L31/102Y02P70/50
Inventor 邢伟荣申晨刘铭周朋李乾
Owner 11TH RES INST OF CHINA ELECTRONICS TECH GROUP CORP
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