Vertical cavity surface emitting laser based on van der Waals epitaxy and its fabrication method

Abstract

A vertical cavity surface emitting laser based on van der Waals epitaxy and its manufacturing method. In the above manufacturing method, making a GaN-based active region structure includes: covering a single layer of two-dimensional material on a first substrate; The GaN-based active region structure is epitaxially grown on the first substrate of the dimensional material. The GaN-based active region structure includes from bottom to top: an n-type GaN layer, an active region, an electron blocking layer, a p-type GaN layer and a p+GaN layer, and the p+GaN layer serves as the first ohmic contact layer. A first DBR structure is formed on the second substrate. The GaN-based active region structure is peeled off from the first substrate. The stripped GaN-based active region structure is bonded to the first distributed Bragg reflector structure on the second substrate. A second DBR structure is formed over the first ohmic contact layer of the bonded structure. A vertical-cavity surface-emitting laser with low threshold current density and high gain is formed.

Description

technical field [0001] The disclosure belongs to the technical field of lasers, and relates to a van der Waals epitaxy-based vertical cavity surface emitting laser and a manufacturing method thereof. Background technique [0002] GaN-based light-emitting materials with wide bandgap can cover the wavelength range from deep ultraviolet to green, while vertical cavity surface emitting lasers (VCSEL) have low threshold current, can form two-dimensional arrays, single longitudinal mode, beam circular symmetry and high modulation rate And other advantages, it provides the possibility for full-color laser projection, laser display, white solid-state lighting, biosensor and high-speed optical communication. [0003] A vertical cavity surface emitting laser is a light-emitting device that confines photons in a direction perpendicular to the cavity through distributed Bragg reflectors (DBR) on both sides of the cavity. Multiple quantum well structures (MQWs) in the cavity confine the...

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Problems solved by technology

The commonly used lift-off techniques include laser-induced lift-off (LLO), photoelectrochemical etching (PEC) of the sacrificial layer, wet / dry etching or chemical mechanical polishing (CMP), etc., not only the process is complex, but also the active area part wreaks havoc

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