Manufacturing method of copper rewiring layer, silicon optical device and chip

A technology of rewiring layer and manufacturing method, which is applied in the manufacturing of semiconductor devices, electric solid-state devices, semiconductor/solid-state devices, etc., can solve the problems of low conductivity, large skin effect, insufficient high-frequency characteristics, etc., and achieve high electrical performance. , Good high frequency characteristics, small skin effect

Active Publication Date: 2021-02-26
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] The object of the present invention is to provide a manufacturing method of copper rewiring layer, silicon optical device and chip, which is used to solve the problem of low electrical conductivity, large skin effect and high frequency characteristic of aluminum rewiring layer in silicon optical device or chip. Insufficient problem

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  • Manufacturing method of copper rewiring layer, silicon optical device and chip
  • Manufacturing method of copper rewiring layer, silicon optical device and chip
  • Manufacturing method of copper rewiring layer, silicon optical device and chip

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Embodiment Construction

[0030] In order to clearly describe the technical solutions of the embodiments of the present invention, in the embodiments of the present invention, words such as "first" and "second" are used to distinguish the same or similar items with basically the same function and effect. For example, the first threshold and the second threshold are only used to distinguish different thresholds, and their sequence is not limited. Those skilled in the art can understand that words such as "first" and "second" do not limit the number and execution order, and words such as "first" and "second" do not necessarily limit the difference.

[0031] It should be noted that, in the present invention, words such as "exemplary" or "for example" are used as examples, illustrations or illustrations. Any embodiment or design described herein as "exemplary" or "for example" should not be construed as being preferred or advantageous over other embodiments or designs. Rather, the use of words such as "ex...

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Abstract

The invention discloses a manufacturing method of a copper rewiring layer, a silicon optical device and a chip, relates to the technical field of silicon optical device manufacturing, and aims to solve the problems of low conductivity, large skin effect and insufficient high-frequency characteristic of an aluminum rewiring layer in the silicon optical device or the chip. The manufacturing method of the copper rewiring layer comprises the following steps: providing a substrate; forming a rewiring pattern on the surface of the substrate, wherein the rewiring pattern comprises a wiring region anda first isolation region; forming a copper rewiring layer in the wiring region; and forming a micro bump or under-bump metal in contact with the copper redistribution layer, wherein the copper rewiring layer is manufactured by the manufacturing method of the copper rewiring layer. The manufacturing method of the copper rewiring layer provided by the invention is used for manufacturing silicon optical devices and chips.

Description

technical field [0001] The invention relates to the technical field of manufacturing silicon photonic devices, in particular to a method for manufacturing a copper rewiring layer, a silicon photonic device and a chip. Background technique [0002] The core content of silicon-based optoelectronic devices (referred to as silicon photonic devices) is to study how to "miniaturize" and "siliconize" photonic devices and integrate them with nanoelectronic devices. That is to use silicon or other materials compatible with silicon and apply silicon technology to simultaneously manufacture several micro-nano level information functional devices with photons and / or electrons as carriers on the same silicon substrate to form a complete integrated function A new type of large-scale integrated chip. [0003] The manufacturing process of silicon photonics devices is generally improved or developed with the support of existing CMOS processes and equipment, and some processes need to be red...

Claims

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Application Information

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IPC IPC(8): H01L21/48H01L23/498
CPCH01L21/4846H01L23/49838H01L23/49866H01L24/02H01L2224/0231H01L2224/02333H01L2224/0239
Inventor 杨妍
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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