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Fe-doped ZnO nano-film as well as preparation method and application thereof

A nano-film and thin-film technology, applied in chemical instruments and methods, catalyst activation/preparation, water treatment of special compounds, etc., can solve the problem of lack of inhibition of photocatalytic efficiency

Pending Publication Date: 2021-02-19
SHAANXI SCI TECH UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] The purpose of the present invention is to overcome the shortcoming of above-mentioned prior art, provide a kind of Fe-doped ZnO nano film and its preparation method and application, to solve the lack of how to avoid ZnO suppressing the photocatalytic efficiency problem in application process in the prior art

Method used

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  • Fe-doped ZnO nano-film as well as preparation method and application thereof
  • Fe-doped ZnO nano-film as well as preparation method and application thereof
  • Fe-doped ZnO nano-film as well as preparation method and application thereof

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preparation example Construction

[0034] The preparation method of Fe-doped ZnO nano film provided by the invention comprises the following steps:

[0035] The first step is to clean the GPT flexible substrate. Cut the GPT flexible substrate into a square of 1.5cm×1.5cm. After ultrasonic cleaning with acetone (10min) and ethanol (10min), take it out and transfer it to deionized water. Clean with ultrasonic waves for 10 minutes, then take out the GPT flexible substrate, put it in an oven, and dry it at 70°C for later use.

[0036] The second step is to coat the seed crystal layer: deposit the ZnO seed layer (30nm) on the substrate by using a radio frequency magnetron sputtering device (high-purity Zn as the target) on the GPT flexible substrate that has been dried and prepared, and the sputtering time is 3 to 5 minutes. , the sputtering current is 6-10mA, the sputtering is in a vacuum environment, and the vacuum degree is 8-10Pa.

[0037] Preparation of the third step precursor solution: adding hexamethylenete...

Embodiment 1

[0049] 1) Plating a ZnO seed layer on the surface of the GPT substrate with an ion sputtering coater, with a pressure of 10 Pa and a current of 6 mA for 1 min, and a current of 8 mA for 4 min;

[0050] 2) Prepare the precursor solution, Zn(NO 3 ) 2 ·6H 2 O, HMT and Fe(NO 3 ) 3 9H 2 The molar ratio of O is 1:1:1, Zn(NO 3 ) 2 ·6H 2 The molar concentrations of O and HMT are both 0.05mol / L, Fe(NO 3 ) 3 9H 2 The molar concentration of O is 0.05mol / L, and the magnetic stirrer stirs for 20min;

[0051] 3) The obtained precursor solution was transferred to a 40 mL airtight PTFE-lined stainless steel autoclave. Then, the GPT substrate with ZnO seed layer deposited was vertically immersed in the precursor solution, and then placed in an oven at a constant temperature of 95 °C for 6 h, cooled to room temperature naturally, then taken out, washed repeatedly with distilled water and absolute ethanol, and dried at 60 °C. After drying for 1 h at °C, take it out to obtain a sample...

Embodiment 2

[0053] 1) Plating a ZnO seed layer on the surface of the GPT substrate with an ion sputtering coater, with a pressure of 10 Pa and a current of 6 mA for 1 min, and a current of 8 mA for 4 min;

[0054] 2) Prepare the precursor solution, Zn(NO 3 ) 2 ·6H 2 O, HMT and Fe(NO 3 ) 3 9H 2 The molar ratio of O is 1:1:2, Zn(NO 3 ) 2 ·6H 2 The molar concentrations of O and HMT are both 0.05mol / L, Fe(NO 3 ) 3 9H 2 The molar concentration of O is 0.1mol / L, and the magnetic stirrer stirs for 20min;

[0055] 3) The obtained precursor solution was transferred to a 40 mL airtight PTFE-lined stainless steel autoclave. Then, the GPT substrate with ZnO seed layer deposited was vertically immersed in the precursor solution, and then placed in an oven at a constant temperature of 95 °C for 6 h, cooled to room temperature naturally, then taken out, washed repeatedly with distilled water and absolute ethanol, and dried at 60 °C. After drying for 1 h at °C, take it out to obtain a sample....

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Abstract

The invention discloses a Fe-doped ZnO nano-film as well as a preparation method and application thereof. A Fe-doped ZnO nano-material is successfully prepared on a GPET transparent conductive flexible substrate through a hydrothermal method, the photocatalytic performance of the Fe-doped ZnO nano-material is researched. Zinc nitrate hexahydrate, hexamethylenetetramine and ferric nitrate nonahydrate are taken as main reactants, firstly ion sputtering is conducted on the surface of a flexible substrate GPET to obtain a very thin ZnO seed crystal layer; then Fe-doped ZnO precursor solutions withdifferent concentrations are prepared; and the flexible substrate is vertically put in a reaction solution, and a Fe-doped ZnO nano structure is grown by a hydrothermal method to obtain the Fe-ZnO / GPET nano composite material which can be used as a photocatalyst. The product obtained through the hydrothermal reaction has a special regular hexagonal nanorod-like structure, has a strong degradationeffect on a methylene blue solution, has a wide research prospect in the fields of environmental governance and the like, and is suitable for large-area production and application.

Description

【Technical field】 [0001] The invention belongs to the technical field of metal oxide semiconductor materials, and in particular relates to an Fe-doped ZnO nanometer film and a preparation method and application thereof. 【Background technique】 [0002] As an n-type semiconductor, zinc oxide (ZnO) is widely used in the photocatalytic degradation of organic dyes because of its wide bandgap of 3.37eV, high exciton binding energy of about 60meV, anisotropic growth and environmental protection. catalyst of light. However, ZnO inhibits the photocatalytic efficiency due to the rapid recombination of photogenerated electron-hole pairs. For nanomaterials, doping can significantly change its properties, because the number of atoms after doping is small and most of them are on the surface of nanomaterials. [0003] At present, the synthesis methods of ZnO nanomaterials include evaporation method, sol-gel method, atomic layer deposition method, vapor phase deposition method, spray pyro...

Claims

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Application Information

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IPC IPC(8): B01J31/06B01J23/80B01J37/34B01J37/10C02F1/32
CPCB01J31/06B01J23/80B01J23/002B01J37/342B01J37/10C02F1/32C02F2305/10C02F2305/023C02F2101/308B01J35/23B01J35/59B01J35/39
Inventor 于琦蒋剑超容萍姜立运杨青青
Owner SHAANXI SCI TECH UNIV
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