Silicon wafer roughening solution

Abstract

The invention discloses a roughness-controllable silicon wafer roughening solution without microscopic surface sharp corners, which comprises the following main components: an inorganic acid, an oxidant, a fluorine-containing compound, a buffer agent, a long-chain organic matter and water. By adjusting the addition amount of each component, the surface roughness of an etched silicon wafer can be controlled, and no microcosmic sharp corner is generated on the surface of the etched silicon wafer.

Description

technical field [0001] The invention belongs to the field of electronic chemicals, and in particular relates to a silicon wafer dehairing liquid and a preparation method thereof Background technique [0002] In the IGBT power device chip, it is necessary to grow a metal layer on the back of the silicon chip to reduce the body resistance of the device and the contact resistance of the electrode, so that the current can effectively pass through the power device without excessive power loss. [0003] When the surface of the silicon wafer is smooth, it is difficult for metal atoms to diffuse, stay and gather on the surface, so the power device chip generally requires the silicon wafer to have a certain roughness to increase the actual contact area between the metal film and the silicon wafer surface, so that the metal film and the silicon wafer surface The substrate is bonded more tightly, improving adhesion and structural compactness. At the same time, the roughened surface ca...

AI Technical Summary

Problems solved by technology

Microscopic sharp corners on the surface of silicon wafers may cause sharp discharges when subjected to high voltages, which will affect the performance of IGBT devices

Not suitable for the development trend of ultra-high voltage in the future

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