SRAM memory cell reinforcing method based on DICE structure and SRAM memory array

Abstract

The invention relates to the technical field of integrated circuits, in particular to an SRAM memory cell reinforcing method based on a DICE structure and an SRAM memory array. The method comprises the following steps: on the basis of designing a double-interlock storage unit DICE structure in a circuit, adding an NMOS isolation tube between NMOS tubes which cannot share a source end and a drain end and play a switching role, and connecting a grid electrode of the added NMOS isolation tube with GND. The problem that in the prior art, leakage current can be generated between adjacent NMOS tubesunder total dose radiation is solved. Cross layout is carried out on sensitive MOS tubes in circuit design in the aspect of layout, and the distance between sensitive nodes is increased, so that theprobability of circuit overturning during single-particle radiation is greatly reduced. The effect of enabling the SRAM memory cell and the array to have the anti-radiation capability on the premise of not influencing the function is achieved.

Description

Technical field[0001]The invention relates to the technical field of integrated circuits, and in particular to a method for strengthening an SRAM storage unit based on a DICE structure and an SRAM storage array.Background technique[0002]SRAM (Static Random-Access Memory) is widely used in the aerospace field. Due to the complex space application environment, the high-energy charged particles in space interact with the device, resulting in changes in the electrical parameters of the memory, data errors or loss and failure to work properly, how to ensure that the device works normally in a radiation environment and improve the radiation resistance of the SRAM storage unit? It has been a hot research topic all the time.[0003]The standard SRAM basic memory cell structure does not have the value of application in the radiation environment. In the prior art, the transistor is isolated from the transistor by field oxygen. In a conventional environment, field oxygen has no conductive channe...

AI Technical Summary

Problems solved by technology

In a conventional environment, field oxygen has no conductive channel, and there will be no leakage current, but in a radiation environment, it is possible to form an inversion leakage channel under the field oxygen, thereby extending to the source / drain region of the adjacent NMOS, resulting in Leakage current occurs between adjacent NMOS transistors

At the same time, single-event radiation may also cause device flipping and functional failure

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