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Preparation method, product and application of zinc oxide modified gallium nitride silver-loaded nanorod heterojunction photocatalyst

A zinc oxide modification, photocatalyst technology, applied in the field of photocatalysis, can solve the problems of reducing the redox ability of valence band holes and conduction band electrons, reducing the band gap, increasing the absorption of visible light, etc., and achieving the effect of excellent catalytic performance.

Active Publication Date: 2020-12-22
SHANGHAI NAT ENG RES CENT FORNANOTECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

While reducing the band gap and increasing the absorption of visible light, it is also bound to reduce the redox ability of valence band holes and conduction band electrons.

Method used

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  • Preparation method, product and application of zinc oxide modified gallium nitride silver-loaded nanorod heterojunction photocatalyst
  • Preparation method, product and application of zinc oxide modified gallium nitride silver-loaded nanorod heterojunction photocatalyst

Examples

Experimental program
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Effect test

Embodiment 1

[0027] A silver-supported nanorod heterojunction photocatalyst of zinc oxide-modified gallium nitride prepared by sol-gel method (GaN) 1-x (ZnO) x Solid solution gel, spin-coated on the surface of Si wafers grown on the (100) crystal plane, and obtained after ammonia treatment (GaN) 1-x (ZnO) x solid solution nanorods, followed by photodeposition to carry Ag modification, to obtain Ag / (GaN) 1-x(ZnO) x The nanorod material is prepared as follows:

[0028] a. One-dimensional (GaN) 1-x (ZnO) x Preparation of solid solution nanorods: First, weigh 6.71g of gallium nitrate hydrate and 2.47g of zinc acetate dihydrate and dissolve them in 2.3 mL of ethylenediamine and 50 mL of ethylene glycol in methyl ether, and stir for 60 minutes in a water bath at 70°C , to form a transparent gel solution; then, the sol was spin-coated on a (100) oriented Si sheet at a speed of 800 rpm, and dried at 200°C for 15 min to form a gel; then, placed in a tube furnace for 800 Calcined at ℃ for 60 ...

Embodiment 2

[0033] A silver-loaded nanorod heterojunction photocatalyst of zinc oxide modified gallium nitride, similar to Example 1, according to the following steps:

[0034] a. One-dimensional (GaN) 1-x (ZnO) x Preparation of solid solution nanorods: First, weigh 6.71g of gallium nitrate hydrate and 2.47g of zinc acetate dihydrate and dissolve them in 2.3 mL of ethylenediamine and 50 mL of ethylene glycol in methyl ether, and stir for 60 minutes in a water bath at 70°C , to form a transparent gel solution; then, the sol was spin-coated on a (100)-oriented Si sheet at a speed of 800 rpm, and dried at 200°C for 15 min to form a gel; then, placed in a tube furnace for 700 Calcined at ℃ for 60 min to obtain a white and uniform Zn-Ga-O precursor film; finally, the obtained Zn-Ga-O film was moved into a chemical vapor deposition CVD furnace, and ammonia gas was introduced at a temperature of 800~1000℃ Nitriding for 2h, one-dimensional (GaN) 0.85 (ZnO) 0.15 Solid solution nanorod material...

Embodiment 3

[0038] A silver-loaded nanorod heterojunction photocatalyst of zinc oxide modified gallium nitride, similar to Example 1, according to the following steps:

[0039] a. One-dimensional (GaN) 1-x (ZnO) x Preparation of solid solution nanorods: First, weigh 6.71g of gallium nitrate hydrate and 2.47g of zinc acetate dihydrate and dissolve them in 2.3 mL of ethylenediamine and 50 mL of ethylene glycol in methyl ether, and stir for 60 minutes in a water bath at 70°C , to form a transparent gel solution; then, the sol was spin-coated on a (100)-oriented Si sheet at a speed of 800 rpm, and dried at 200°C for 15 min to form a gel; then, placed in a tube furnace for 900 Calcined at ℃ for 60 min to obtain a white and uniform Zn-Ga-O precursor film; finally, the obtained Zn-Ga-O film was moved into a chemical vapor deposition CVD furnace, fed with ammonia gas and nitrided at 1000℃ 2h, that is, one-dimensional (GaN) 0.55 (ZnO) 0.45 solid solution nanorods;

[0040] b. Photodeposited A...

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Abstract

The invention discloses a preparation method, product and application of a zinc oxide modified gallium nitride silver-loaded heterojunction photocatalyst. (GaN)1-x(ZnO)x solid solution gel is preparedby virtue of a sol-gel method, spin-coating of the (GaN)1-x(ZnO)x solid solution gel on the surface of a Si sheet growing on a crystal face (100) is carried out, treatment is conducted by virtue of ammonia gas to obtain a (GaN)1-x(ZnO)x solid solution nanorod, and then photodeposition Ag-loaded modification is conducted on the nanorod, and the Ag / (GaN)1-x(ZnO)x nanorod material is obtained. The catalyst is mainly characterized in that the structure of the catalyst is a silver-loaded heterojunction nanorod of zinc oxide modified gallium nitride; the specific one-dimensional nanorod heterojunction structure has a shorter longitudinal carrier migration path and an ultra-large specific surface area, electron hole separation and migration in the photocatalysis process are facilitated, and an optical excitation system can be utilized to the maximum extent. The catalyst product has the characteristics of being capable of effectively carrying out photocatalytic degradation on phenol and showing excellent photodegradation performance on phenol.

Description

technical field [0001] The invention relates to the technical field of photocatalysis, and specifically discloses a preparation method and application of a silver-loaded nanorod heterojunction photocatalyst modified by zinc oxide and gallium nitride. Background technique [0002] Gallium nitride (GaN) is a wide-bandgap semiconductor material, which is very similar to zinc oxide (ZnO) materials in terms of structure, lattice parameters and physical and chemical properties. From the structural point of view, they all have a hexagonal zinc wurtzite structure and very similar unit cell parameters, and the lattices are very matched. Therefore, it is entirely possible for GaN and ZnO to form effective lattice mutual solubility in the whole composition range. Ga, Zn, N, and O atoms are in adjacent positions in the periodic table of elements, and they have similar atomic radii and electronegativity properties, which makes the process of Zn replacing Ga and O replacing N relatively ...

Claims

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Application Information

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IPC IPC(8): B01J27/24B01J37/34B01J37/08B82Y30/00B82Y40/00C02F1/30C02F101/34
CPCB01J27/24B01J37/036B01J37/348B01J37/344B01J37/082B82Y30/00B82Y40/00C02F1/30C02F2305/10C02F2101/345B01J35/39
Inventor 崔大祥王敬锋
Owner SHANGHAI NAT ENG RES CENT FORNANOTECH
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