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A method for measuring thermal resistance of sic power modules

A technology of a power module and a measurement method, which is applied in the direction of measuring electricity, measuring devices, measuring electrical variables, etc., can solve the problems of poor accuracy and large errors, and achieve the effect of improving accuracy

Active Publication Date: 2021-12-14
ELECTRIC POWER RESEARCH INSTITUTE, CHINA SOUTHERN POWER GRID CO LTD +1
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] This application provides a method for measuring the thermal resistance of SiC power modules, which solves the technical problems of large errors and poor precision in the linear fitting method used for collecting data in the prior art

Method used

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  • A method for measuring thermal resistance of sic power modules
  • A method for measuring thermal resistance of sic power modules
  • A method for measuring thermal resistance of sic power modules

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Embodiment Construction

[0044]In order to enable those skilled in the art to better understand the solution of the present application, the technical solution in the embodiment of the application will be clearly and completely described below in conjunction with the accompanying drawings in the embodiment of the application. Obviously, the described embodiment is only It is a part of the embodiments of this application, not all of them. Based on the embodiments in this application, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the scope of protection of this application.

[0045] In the prior art, the structure of a common SiC power module is as follows figure 2 as shown, figure 2 Among them, the structure of SiC power module, from top to bottom is SiC chip, nano-silver sintered layer, copper clad layer, insulating ceramic board (DirectCopperBond, direct bonding copper technology / ActiveMetalBrazing, aluminum nitride copper clad cer...

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Abstract

The present application discloses a method for measuring the thermal resistance of a SiC power module. The method includes: heating the SiC power module with multiple sets of temperatures, and collecting the case temperature and collector-emitter voltage data of the multiple sets of SiC power modules; The electrode-emitter voltage data is linearly fitted, and the linear fitting parameters of the revised formula are solved by using the Huber Loss parameter loss function; the case temperature and collector-emitter voltage data of SiC power modules under multiple sets of high currents are measured, Substitute the case temperature and collector-emitter voltage data into the revised formula to calculate the junction temperature and thermal resistance corresponding to multiple sets of high current. The application solves the technical problem that the linear fitting method adopted for collecting data in the prior art has large errors and poor precision.

Description

technical field [0001] The present application relates to the technical field of power electronic devices, in particular to a method for measuring thermal resistance of a SiC power module. Background technique [0002] In the process of power grid power transmission, press-fit package power IGBTs have gradually replaced soldered power semiconductor devices. Compared with the soldering IGBT, the crimping IGBT has a larger voltage and current capacity. In the actual working process, the crimping IGBT will generate a lot of power consumption, so the thermal resistance is an important factor affecting the reliability of the crimping IGBT. [0003] In addition, with the increase of urban electricity demand, power semiconductor devices continue to develop in the direction of high voltage and high current, which will inevitably generate a large amount of power dissipation during operation, which will increase the operating junction temperature of the device, resulting in a decrease...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01R31/26
CPCG01R31/2601G01R31/2619
Inventor 何智鹏李巍巍许树楷
Owner ELECTRIC POWER RESEARCH INSTITUTE, CHINA SOUTHERN POWER GRID CO LTD
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