SiC power module thermal resistance measurement method

A technology of power modules and measurement methods, which is applied in the direction of measuring electricity, measuring devices, and measuring electrical variables, etc., can solve problems such as poor precision and large errors, and achieve the effect of improving accuracy

Active Publication Date: 2020-12-18
ELECTRIC POWER RESEARCH INSTITUTE, CHINA SOUTHERN POWER GRID CO LTD +1
View PDF9 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] This application provides a method for measuring the thermal resistance of SiC power modules, which solves the technical problems of large errors and poor precision in the linear fitting method used for collecting data in the prior art

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • SiC power module thermal resistance measurement method
  • SiC power module thermal resistance measurement method
  • SiC power module thermal resistance measurement method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0044]In order to enable those skilled in the art to better understand the solution of the present application, the technical solution in the embodiment of the application will be clearly and completely described below in conjunction with the accompanying drawings in the embodiment of the application. Obviously, the described embodiment is only It is a part of the embodiments of this application, not all of them. Based on the embodiments in this application, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the scope of protection of this application.

[0045] In the prior art, the structure of a common SiC power module is as follows figure 2 as shown, figure 2 Among them, the structure of SiC power module, from top to bottom is SiC chip, nano-silver sintered layer, copper clad layer, insulating ceramic board (DirectCopperBond, direct bonding copper technology / ActiveMetalBrazing, aluminum nitride copper clad cer...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses a SiC power module thermal resistance measurement method, and the method comprises the steps: employing a plurality of groups of temperatures to heat a SiC power module, and collecting the shell temperatures of the plurality of groups of SiC power modules and the voltage data of a collector and an emitter; carrying out linear fitting on the shell temperature and collector and emitter voltage data, and solving linear fitting parameters of a revision formula by adopting a Huber Loss to-be-parameterized loss function; measuring shell temperature and collector emitter voltage data of the SiC power module under multiple groups of large currents, and substituting the shell temperature and collector emitter voltage data into a revision formula to calculate junction temperature and thermal resistance corresponding to the multiple groups of large currents. The technical problems that in the prior art, a linear fitting method adopted for collected data is large in error and poor in precision are solved.

Description

technical field [0001] The present application relates to the technical field of power electronic devices, in particular to a method for measuring thermal resistance of a SiC power module. Background technique [0002] In the process of power grid power transmission, press-fit package power IGBTs have gradually replaced soldered power semiconductor devices. Compared with soldering IGBT, crimping IGBT has larger voltage and current capacity. In actual operation, crimping IGBT will generate a lot of power consumption, so thermal resistance is an important factor affecting the reliability of crimping IGBT. [0003] In addition, with the increase of urban electricity demand, power semiconductor devices continue to develop in the direction of high voltage and high current, which will inevitably generate a large amount of power dissipation during operation, which will increase the operating junction temperature of the device, resulting in a decrease in device reliability and short...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): G01R31/26
CPCG01R31/2601G01R31/2619
Inventor 何智鹏李巍巍许树楷
Owner ELECTRIC POWER RESEARCH INSTITUTE, CHINA SOUTHERN POWER GRID CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap