Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Preparation method of silver-plated graphene film

A graphene film and graphene technology, applied in chemical instruments and methods, sputtering plating, ion implantation plating, etc., can solve the problem that it is difficult to apply small volume, highly integrated electronic equipment, and it is difficult to take into account ultra-thin thickness , poor shielding effect and other problems, to solve the problem of electromagnetic compatibility, to facilitate nucleation and growth, and to achieve the effect of low cost

Pending Publication Date: 2020-12-11
NO 33 RES INST OF CHINA ELECTRONICS TECHNOOGY GRP
View PDF6 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] It is often difficult to take into account the ultra-thin thickness of graphene film while achieving high shielding effectiveness
This is because the thickness is a key factor affecting the shielding performance of the material. If the thickness is greater than the skin depth, the material has a higher shielding effectiveness; otherwise, the shielding effect is not good.
The thickness of the micron-scale film is smaller than the skin depth, and the shielding effect is low; while the shielding effect of the millimeter-scale film is high, but the thickness is relatively large, which cannot be applied to small-volume, highly-integrated electronic devices

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Preparation method of silver-plated graphene film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0024] S1 Disperse graphene oxide in distilled water to form a 2 mg / mL graphene oxide dispersion, and obtain a graphene oxide film by suction filtering the graphene oxide dispersion

[0025] S2 Take the carbonized sample and place it in a graphitization furnace. Under an argon atmosphere and a pressure of 100 MPa, raise the temperature to 2400°C at a rate of 2°C / min, keep it warm for 4 hours for graphitization, and wait for the temperature in the furnace to cool. After reaching room temperature, obtain graphene film;

[0026] S3 Place the graphene film in a low-temperature plasma reaction device, use oxygen as the discharge gas, and perform surface modification treatment on the graphene film for 3 h at a discharge power of 4 W;

[0027] S4 Place the surface-modified graphene film in a magnetron sputtering system. The target material is a high-purity silver target. The silver film was sputtered on the surface of the graphene film for 60 min under the condition of radiation pow...

Embodiment 2

[0030] S1 Disperse graphene oxide in distilled water to form a 3 mg / mL graphene oxide dispersion, and spin-coat the graphene oxide dispersion to obtain a graphene oxide film;

[0031] S2 Take the carbonized sample and place it in a graphitization furnace. Under a nitrogen atmosphere and a pressure of 200 MPa, raise the temperature to 2600°C at a rate of 4°C / min, hold for 3 hours for graphitization, and wait for the temperature in the furnace to cool. After reaching room temperature, obtain graphene film;

[0032] S3 Place the graphene film in a low-temperature plasma reaction device, use oxygen as the discharge gas, and perform surface modification treatment on the graphene film at a discharge power of 10 W for 2 h;

[0033] S4 Place the surface-modified graphene film in a magnetron sputtering system. The target material is a high-purity silver target. The silver film was sputtered on the surface of the graphene film for 40 min under the condition of radiation power.

[0034...

Embodiment 3

[0036] S1 Disperse graphene oxide in distilled water to form a 5 mg / mL graphene oxide dispersion, and obtain a graphene oxide film by scraping the graphene oxide dispersion;

[0037] S2 Take the carbonized sample and place it in a graphitization furnace. Under a helium atmosphere and a pressure of 300 MPa, raise the temperature to 2800°C at a rate of 6°C / min, keep it warm for 2 hours for graphitization, and wait for the temperature in the furnace to cool. After reaching room temperature, obtain graphene film;

[0038] S3 Place the graphene film in a low-temperature plasma reaction device, use oxygen as the discharge gas, and perform surface modification treatment on the graphene film at a discharge power of 15 W for 1 h;

[0039] S4 Place the surface-modified graphene film in a magnetron sputtering system. The target material is a high-purity silver target. The silver film was sputtered on the surface of the graphene film for 20 min under the condition of radiation power.

...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention belongs to the technical field of preparation and application of carbon nanomaterials, and particularly relates to a preparation method of a silver-plated graphene film. Through graphitization, surface modification, magnetron sputtering coating and annealing treatment, the prepared silver-plated graphene film has higher conductivity so as to have smaller skin depth, and the higher shielding effectiveness of the silver-plated graphene film can be ensured on the premise of small thickness. According to the preparation method of the silver-plated graphene film provided by the invention, through a low-temperature plasma surface treatment technology, the surface roughness of the graphene can be increased, and nucleation and growth of metal nanoparticles are facilitated, so that interface connection between the graphene and a metal material is achieved, the damage degree to a graphene crystal structure is small, and the influence on the conductivity and the shielding effectiveness of the graphene crystal structure is very small. A metal coating is deposited on the graphene film through a magnetron sputtering method, so that the silver-plated graphene film is obtained, the deposition speed is high, the thickness is uniform and controllable, the cost is low, and the method is a coating method capable of achieving large-scale production.

Description

technical field [0001] The invention belongs to the technical field of preparation and application of carbon nanomaterials, and more specifically relates to a method for preparing a silver-coated graphene film. Background technique [0002] Flexible circuit board (FPC) is a printed circuit board (PCB) that can be bent or folded freely. It has the characteristics of small size, light weight, and bendability. It has been widely used in smart phones, tablet computers, wearable electronic products, etc. Highly integrated electronic equipment mainly plays the role of conducting current and transmitting signals. Since the signal transmission line is distributed on the outermost layer of the FPC board, the signal is easily distorted by external electromagnetic interference during the signal transmission process. Therefore, it is necessary to press a layer of ultra-thin and flexible electromagnetic shielding film on the FPC board to play a role. The role of shielding external elect...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/02C23C14/18C23C14/35C01B32/205H05K9/00
CPCC01B32/205C23C14/18C23C14/022C23C14/35H05K9/0081
Inventor 刘伟贾琨谷建宇王东红王权马晨
Owner NO 33 RES INST OF CHINA ELECTRONICS TECHNOOGY GRP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com