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Infrared detector splicing module and infrared detector integrated assembly

A technology of infrared detectors and module substrates, applied in the field of infrared detectors, can solve the problems of inability to realize splicing of super large area array infrared detectors, no consideration of electrical integration, poor scalability, etc., and achieve good temperature uniformity and scope of application Wide range of effects with high module reliability

Active Publication Date: 2020-12-01
11TH RES INST OF CHINA ELECTRONICS TECH GROUP CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In the existing modular splicing method, although it has replaceability, the degree of integration is limited, and the integration of electrical leads is not considered. It can only be applied to the splicing of 2×N detectors, and it is impossible to realize super large detectors of 3×3 and above. Area array infrared detector splicing, poor scalability

Method used

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  • Infrared detector splicing module and infrared detector integrated assembly
  • Infrared detector splicing module and infrared detector integrated assembly
  • Infrared detector splicing module and infrared detector integrated assembly

Examples

Experimental program
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Effect test

Embodiment 1

[0080] Such as Figure 1-Figure 9 As shown, in this embodiment, the infrared detector splicing module 100 includes: an infrared detector chip 10 , a module substrate 20 , an electrical module 30 , a support column 40 and a leveling gasket 50 .

[0081] Wherein, the module substrate 20 is made of SiC material. combine figure 1 with Figure 5 As shown, the infrared detector chip 10 is glued onto the first surface S1 of the module substrate 20 by low temperature adhesive. The side surface of the module substrate 20 reserves a threaded hole h3 for connection with the splicing tooling. At the same time, if Figure 5 with Image 6 As shown, around the first surface S1 bonded with the infrared detector chip 10, high-precision photolithography marks 201 are processed for chip bonding and positioning.

[0082] Such as image 3 with Figure 4 As shown, the electrical module 30 includes: a fixing board 310 , a flexible circuit board 320 and an electrical insert 330 .

[0083]Whe...

Embodiment 2

[0096] Such as Figure 10-15 As shown, the difference from Embodiment 1 is that in this embodiment, the infrared detector chip 10 has double terminals 110 , and there are two electrical modules 30 , and the two electrical modules 30 are electrically connected to one of the terminals 110 . That is to say, for the infrared detector chip 10 with double leads 110, two electrical modules 30 can be set, wherein the two electrical modules 30 share a first board body 311 and an electrical plug-in 330, and the two electrical modules 30 of the infrared detector chip 10 Each lead-out terminal 110 is lead out from the electrical plug-in 330 on the second surface S2 of the module substrate 20 through two flexible circuit boards 320 .

[0097] Correspondingly, as Figure 16 with Figure 17 As shown, it is an integrated assembly 1000 formed by splicing a plurality of infrared detector splicing modules 100 with double leads 110 to a splicing substrate 900 .

Embodiment 3

[0099] Such as Figure 18 with Figure 19 As shown, the difference from Embodiment 1 is that in this embodiment, there are three support columns 40, so that when a plurality of splicing modules 100 are spliced ​​and connected, the assembly efficiency can be improved, and the number of splicing modules 100 can be reduced. The Z direction is over-constrained. The Z direction mentioned here can be understood as the axial direction of the support column 40 .

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Abstract

The invention provides an infrared detector splicing module and an infrared detector integrated assembly. Through highly integrated module design, free splicing of an ultra-large area array infrared detector can be realized, and the operation is simple. An electrical module is integrated with a module substrate. Finally, an electrical signal of the infrared detector chip is led out from the back of the module substrate. No matter whether the infrared detector chip is led out unilaterally or bilaterally, the infrared detector chip can be expanded under the condition of ensuring a very small splicing seam, is not only suitable for splicing 2 * N detectors, but also can be used for splicing 3 * 3 and more than 3 * 3 ultra-large area array infrared detectors, and is wide in application range.Modules can be replaced independently, and maintainability is good. The module substrate is made of a SiC material and can be directly connected with a cold chain, lower heat loss is achieved, good temperature uniformity between modules is guaranteed, the SiC material and the chip material are good in thermal expansion coefficient matching performance, and it can be guaranteed that focal plane deformation is small, chip stress is small and module reliability is high at a low temperature.

Description

technical field [0001] The invention relates to the technical field of infrared detectors, in particular to an infrared detector splicing module and an infrared detector integrated assembly. Background technique [0002] Infrared detector technology is widely used in astronomical observation, environmental monitoring and topographic mapping and other fields. Field of view and resolution are two important indicators of space remote sensors. The field of view determines the observation range, and the resolution determines the imaging quality. In a large field of view and high resolution optical system, the field of view and resolution of the infrared system are mutually restrictive under certain circumstances. The ultra-large area array infrared focal plane detector is an important factor to improve the resolution of the large field of view infrared imaging system. means. [0003] Limited by the existing material technology, the maximum size of infrared focal plane detectors...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01D5/26G01D5/12
CPCG01D5/26G01D5/12
Inventor 李雪梨张磊付志凯孟令伟王成刚
Owner 11TH RES INST OF CHINA ELECTRONICS TECH GROUP CORP
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