A low noise amplifier

Abstract

The invention discloses a heterojunction bipolar transistor HBT and a low-noise amplifier including the HBT. The HBT includes: a substrate, a dielectric layer, an emitter body, a base body, and a collector body distributed sequentially from bottom to top ; The emitter body and the collector body are made of MoS 2 As a representative n-type two-dimensional transition metal sulfide, the base body is a p-type single-layer graphene Gr; it also includes: an emitter electrode, a base electrode, and a collector electrode; wherein, the emitter electrode and the The base body is on the emitter body, and the two are not in contact with each other; the base electrode and the collector body are on the base body, and the two are not in contact with each other; the collector electrode on the collector body. In the present invention, the HBT device part adopts two-dimensional materials to reduce the transit time; it has a Schottky barrier with smaller forward voltage drop and faster recovery speed; the passive device part adopts a coplanar waveguide structure, which can avoid Hole punching simplifies the process.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, and in particular relates to a low-noise amplifier. Background technique [0002] As the process line width enters the atomic level of tens of nanometers, Moore's Law, which reflects the development law of silicon technology, will eventually become saturated. With the development of science and technology. Therefore, the International Semiconductor Technology Roadmap (ITRS) puts forward two main development directions of "More Moore" and "More than Moore". [0003] The development and application transformation of new materials can effectively promote the development of "More Moore" and "More than Moore". In the past decade, 2D materials have been extensively studied in various fields due to their excellent electrical, thermal, and mechanical properties. In addition, heterostructures based on 2D materials have attracted attention because of their weaker interlayer bonding, quantum effec...

AI Technical Summary

Problems solved by technology

[0007] Aiming at the defects and improvement needs of the prior art, the present invention provides a heterojunction bipolar transistor HBT and a low-noise amplifier including the HBT. There are a large number of defects in the heterojunction interface of the HBT-based low-noise amplifier LNA, which generates large noise, and the technical problems of high manufacturing cost and difficult process of passive devices

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