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HEMT-based annular opening terahertz amplitude modulator and manufacturing method

An amplitude modulation, terahertz technology, applied in the field of terahertz wave amplitude modulation, which can solve the problems of high parasitic effect, difficult integration, low modulation depth and modulation rate of the modulator, avoiding processing difficulty, strong structural plasticity, and enhanced resonance. the effect of strength

Active Publication Date: 2020-11-03
重庆太赫兹科技发展有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The technical problem to be solved by the present invention is: the current terahertz modulator is affected by the structure and material of the device, which has high parasitic effects, resulting in low modulation depth and modulation rate of the modulator, and is not easy to integrate

Method used

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  • HEMT-based annular opening terahertz amplitude modulator and manufacturing method
  • HEMT-based annular opening terahertz amplitude modulator and manufacturing method
  • HEMT-based annular opening terahertz amplitude modulator and manufacturing method

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Embodiment 1

[0042] The present invention provides an ingenious combination of 4C open annular metasurface structure and HEMT, utilizing the resonance characteristics of the metasurface structure and the high-speed switching characteristics of the HEMT, and controlling the concentration of the two-dimensional electron gas in the HEMT channel. The resonant mode enables the modulator to quickly and efficiently perform amplitude modulation on the terahertz wave propagating in free space, and the modulation depth can reach more than 90%.

[0043]Such as figure 1 As shown, the modulator in this embodiment includes a semiconductor substrate 1, an epitaxial layer 2 located on the surface of the semiconductor substrate, and a modulation array 3, a Schottky electrode 4 and an ohmic electrode 5 are arranged on the epitaxial layer;

[0044] The modulation array 3 is composed of M×N (wherein M≥4, N≥4) modulation elements 31 are periodically arranged, and each modulation element 31 is composed of 4 ope...

Embodiment 2

[0056] Such as Figure 4 As shown, at different plasma frequencies ωp, the transmission coefficient spectrum of the modulator. As ωp decreases from 1e+016 (equivalent to no gate voltage applied, the opening of the metal open ring is shorted due to the high concentration of two-dimensional electron gas in the HEMT channel) to 1e+012 (equivalent to the applied gate voltage The pole voltage makes the two-dimensional electron gas in the channel completely exhausted, so that the opening of the metal open ring is completely opened), the resonance frequency is blue-shifted from 0.146THz (off state) to 0.223THz (on state), and the blue shift amount Δf= 77GHz. From this we can calculate that the maximum modulation depth of the modulator at 0.146 THz is 96.9%, and the maximum modulation depth at 0.223 THz is 92.2%. The blue shift of the resonance frequency point is due to the conversion of the resonance mode of the metamaterial structure from dipole resonance to LC resonance with the ...

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Abstract

The invention discloses an HEMT-based annular opening terahertz amplitude modulator and a manufacturing method thereof. The modulator comprises a semiconductor substrate; an epitaxial layer located onthe surface of the semiconductor substrate; and a modulation array, a Schottky electrode and an ohmic electrode which are arranged on the epitaxial layer. The modulation array is formed by periodically arranging M * N modulation array elements, each modulation array element is composed of four structural units with annular openings, a high-electron-mobility transistor is matched at the opening ofeach structural unit, and a grid electrode of each high-electron-mobility transistor is connected with a Schottky electrode through a grid electrode feeder line and then connected with a negative electrode of a power source. The source electrode and the drain electrode of the high-electron-mobility transistor are connected with the two sides of the opening of the structural unit respectively, andthe structural unit is connected with the ohmic electrode through the source-drain feeder and then connected with the positive electrode of the power supply. A high-electron-mobility transistor is controlled by an external bias voltage to perform conversion of a metasurface resonance mode, rapid amplitude modulation of terahertz waves propagated in a free space is achieved, and modulation of multiple frequency points is achieved by mutual conversion of different modes of a structural unit.

Description

technical field [0001] The present invention relates to the technical field of terahertz wave amplitude modulation, in particular to a HEMT-based annular opening terahertz amplitude modulator and a manufacturing method applied to a 6G communication system. Background technique [0002] With the continuous improvement of space high-speed network requirements, the existing spectrum resources are difficult to meet the needs of the society, so it is necessary to develop new spectrum resources. The spectrum resources in the terahertz frequency band (0.1-10THz) are extremely rich. Compared with microwave communication, terahertz communication has the characteristics of wide bandwidth and high carrier frequency, which provides the possibility to meet social needs. At present, the terahertz communication system is developing towards high-speed and long-distance, but its development is hindered due to the lack of high-performance key components. The terahertz modulator is one of the...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H03C1/00H03C1/36H04L27/04G02F1/01
CPCG02F1/0102H03C1/00H03C1/36H04L27/04
Inventor 马勇潘武杨力豪杨龙亮何金橙肖惠云
Owner 重庆太赫兹科技发展有限公司
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