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A hemt-based annular opening terahertz amplitude modulator and manufacturing method

An amplitude modulation and terahertz technology, applied in the field of terahertz wave amplitude modulation, can solve the problems of high parasitic effect, low modulation depth and modulation rate of the modulator, difficult integration, etc., to avoid processing difficulties, strong structural plasticity, and rapid amplitude modulation. Effect

Active Publication Date: 2021-04-20
重庆太赫兹科技发展有限公司
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] The technical problem to be solved by the present invention is: the current terahertz modulator is affected by the structure and material of the device, which has high parasitic effects, resulting in low modulation depth and modulation rate of the modulator, and is not easy to integrate

Method used

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  • A hemt-based annular opening terahertz amplitude modulator and manufacturing method
  • A hemt-based annular opening terahertz amplitude modulator and manufacturing method
  • A hemt-based annular opening terahertz amplitude modulator and manufacturing method

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Embodiment 1

[0042] The present invention provides a kind of ingenious combination of 4C open annular metasurface structure and HEMT, and utilizes the resonant characteristics of the metasurface structure and the high-speed switching characteristics of the HEMT to control the concentration of the two-dimensional electron gas in the HEMT channel. The resonant mode enables the modulator to quickly and efficiently perform amplitude modulation on the terahertz wave propagating in free space, and the modulation depth can reach more than 90%.

[0043]Such as figure 1 As shown, the modulator in this embodiment includes a semiconductor substrate 1, an epitaxial layer 2 located on the surface of the semiconductor substrate, and a modulation array 3, a Schottky electrode 4 and an ohmic electrode 5 are arranged on the epitaxial layer;

[0044] The modulation array 3 is composed of M×N (wherein M≥4, N≥4) modulation elements 31 are periodically arranged, and each modulation element 31 is composed of 4 ...

Embodiment 2

[0056] Such as Figure 4 As shown, at different plasma frequencies ωp, the transmission coefficient spectrum of the modulator. As ωp decreases from 1e+016 (equivalent to no gate voltage applied, the opening of the metal open ring is shorted due to the high concentration of two-dimensional electron gas in the HEMT channel) to 1e+012 (equivalent to the applied gate voltage The pole voltage makes the two-dimensional electron gas in the channel completely exhausted, so that the opening of the metal open ring is completely opened), the resonance frequency is blue-shifted from 0.146THz (off state) to 0.223THz (on state), and the blue shift amount Δf= 77GHz. From this we can calculate that the maximum modulation depth of the modulator at 0.146 THz is 96.9%, and the maximum modulation depth at 0.223 THz is 92.2%. The blue shift of the resonance frequency point is due to the conversion of the resonance mode of the metamaterial structure from dipole resonance to LC resonance with the ...

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Abstract

The invention discloses a HEMT-based annular opening terahertz amplitude modulator and a manufacturing method thereof. Electrodes; the modulation array is composed of M×N modulation array elements arranged periodically, the modulation array element is composed of 4 open circular structural units, and the opening of the structural unit is matched with a high electron mobility transistor, the high electron mobility transistor The gate of the gate is connected to the Schottky electrode through the gate feeder and then connected to the negative electrode of the power supply. The source and drain of the high electron mobility transistor are respectively connected to both sides of the opening of the structural unit, and the structural unit is connected to the ohmic electrode through the source-drain feeder. Positive power supply. The supersurface resonant mode is converted by controlling the high electron mobility transistor with an external bias voltage, and the fast amplitude modulation of the terahertz wave propagating in free space is realized, and the different modes of the structural unit are mutually converted to achieve the modulation of multiple frequency points.

Description

technical field [0001] The present invention relates to the technical field of terahertz wave amplitude modulation, in particular to a HEMT-based annular opening terahertz amplitude modulator and a manufacturing method applied to a 6G communication system. Background technique [0002] With the continuous improvement of space high-speed network requirements, the existing spectrum resources are difficult to meet the needs of the society, so it is necessary to develop new spectrum resources. The spectrum resources in the terahertz frequency band (0.1-10THz) are extremely rich. Compared with microwave communication, terahertz communication has the characteristics of wide bandwidth and high carrier frequency, which provides the possibility to meet social needs. At present, the terahertz communication system is developing towards high-speed and long-distance, but its development is hindered due to the lack of high-performance key components. The terahertz modulator is one of the...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H03C1/00H03C1/36H04L27/04G02F1/01
CPCG02F1/0102H03C1/00H03C1/36H04L27/04
Inventor 马勇潘武杨力豪杨龙亮何金橙肖惠云
Owner 重庆太赫兹科技发展有限公司
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