Method for converting high-temperature reverse bias aging time of crimping type insulated gate bipolar transistor

Abstract

The invention discloses a method for converting high-temperature reverse bias aging time of a crimping type insulated gate bipolar transistor. The method comprises the following steps: calculating mechanical energy in a material infinitesimal element caused by tensile stress of a passivation layer in a terminal region of the crimping type IGBT device to obtain the proportionality coefficient of the aging time which must be continued under different temperatures and mechanical pressures for the same aging degree of the IGBT device, so that the conversion between different aging times is realized, and the conversion between the accelerated aging life of the device under the test condition and the service life of the device under the actual working condition can be realized.

Description

technical field [0001] The invention belongs to the field of reliability test methods for power electronic devices, and relates to the determination and detection of the high-temperature reverse bias test time of a high-power insulated gate bipolar transistor (IGBT), in particular to the pressure-connected IGBT device passivation layer under different temperatures and mechanical stresses. The following aging time conversion method. Background technique [0002] In recent years, a new package form of high-power insulated-gate bipolar transistor (IGBT) devices—crimping type—appears. The unique design of high-power press-fit IGBT devices has no leads, no soldering, and double-sided heat dissipation, which greatly improves the power capacity of a single device and improves device reliability. At present, it has a tendency to replace traditional welding potting IGBT devices. Become one of the preferred devices for high-end applications. Unlike previous soldered packages, press-...

AI Technical Summary

Problems solved by technology

At present, there is a lack of a clear accelerated aging model for the terminal of the press-fit IGBT device, especially the lack of analysis of the impact of mechanical stress on the insulation life of the passivation layer at the device terminal

[0008] The above-mentioned deficiencies will make it difficult to reasonably determine the endurance test time of the press-connected IGBT chip, and it is difficult to convert the test results under standard test conditions to various application scenarios of different temperatures, electric fields, and mechanical stress.

If products are screened according to the most stringent application scenarios, it will cause great waste and high cost

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