Semiconductor process method

Abstract

The invention provides a semiconductor process method, which comprises the following steps: 1) providing a substrate; 2) forming a to-be-etched material layer on the substrate, wherein the upper surface of the to-be-etched material layer has a height difference; 3) forming an anti-reflection layer on the upper surface of the to-be-etched material layer; 4) forming a positive photoresist layer on the upper surface of the anti-reflection layer; 5) performing selective exposure to form an exposure area and an unexposed area on the positive photoresist layer; 6) carrying out negative development to remove the positive photoresist in the unexposed area; 7) forming an acidified region on the surface of the positive photoresist layer, wherein the acidified region comprises a polymer capable of reacting with silicon-containing gas; 8) processing the acidified region by adopting silicon-containing gas to convert the acidified region into a mask layer; and 9) removing the anti-reflection layer and the to-be-etched material layer. According to the invention, the method can be effectively used for manufacturing the ultra-fine pattern with the high step difference, the size precision of a device can be guaranteed, the pattern quality can be improved, the process production yield can be improved, and the production cost can be reduced.

Description

technical field [0001] The invention belongs to the field of semiconductor manufacturing, and in particular relates to a semiconductor process method. Background technique [0002] In the semiconductor chip manufacturing process, due to various reasons, the upper surface of the material layer to be etched formed on the substrate has a height difference, that is, the upper surface of a part of the material layer to be etched is higher than other areas of the same layer. And a step height is formed at the high-low junction. The existence of the step difference will add a lot of difficulty to the process, for example, it is easy to cause uneven film deposition in the film deposition process, and it is easy to cause differences in the etching rate in the etching process. Among them, the adverse effects of the step difference on the photolithography process are particularly prominent. For example, the step difference is likely to cause defocus, sub-resolution and affect the etch...

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Problems solved by technology

[0004] In view of the above-mentioned shortcomings of the prior art, the purpose of the present invention is to provide a semiconductor process method for solving the problems of defocusing, resolution reduction and etch blocking in the photolithography process caused by steps in the prior art.

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