High-linearity CMOS terahertz detector front-end circuit

A terahertz detector and front-end circuit technology, applied in the field of terahertz wave detection, can solve the problems of blurred imaging and low resolution

Active Publication Date: 2020-10-23
SOUTHEAST UNIV +1
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the detection output signals realized by traditional terahertz detectors all exhibit square-law characteristics and are not nonlinear output signals.
Therefore, traditional terahertz detector imaging has problems such as imaging blur and low resolution.

Method used

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Embodiment Construction

[0023] The technical solutions of the present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments.

[0024] Such as figure 1 As shown, the high linearity CMOS terahertz detector front-end circuit includes a bias circuit, a detection circuit, a current mirror circuit and a square root operation circuit. The function of the bias circuit is to provide a bias voltage for the gate of the transistor of the detection circuit; the function of the detection circuit is to detect the amplitude information of the terahertz signal at the input terminal, specifically, the terahertz signal modulated by chopping is received by the antenna and sent to the To the gate of the input transistor of the detection circuit, the terahertz signal is processed by the detection circuit to obtain a low-frequency detection signal containing envelope information at the same frequency as the chopping modulation, and the low-frequency detection sign...

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Abstract

The invention discloses a high-linearity CMOS terahertz detector front-end circuit. The high-linearity CMOS terahertz detector front-end circuit comprises a bias circuit, a detection circuit, a current mirror circuit and a square root operation circuit; the bias circuit is used for providing bias voltage for a grid electrode of a detection circuit transistor; the detection circuit is used for detecting amplitude information of terahertz signals at the input end; the current mirror circuit is used for copying current information in a low-frequency detection signal and sending the copied currentinformation to the square root operation circuit; the square root operation circuit performs linearization processing on the copied low-frequency detection signal, and finally outputs an approximatesquare wave output signal with the same frequency as chopping modulation. The terahertz signals are directly detected through the detection transistor with the grid electrode connected with the antenna, linearization processing is conducted on the detection signal, and linear detection of the voltage amplitude of the terahertz signals at the room temperature is achieved for the first time.

Description

technical field [0001] The invention relates to terahertz wave detection technology, in particular to a high-linearity CMOS terahertz detector front-end circuit. Background technique [0002] Terahertz wave is an electromagnetic wave with a frequency ranging from 0.1THz to 10THz, its wavelength corresponds to 3 millimeters to 30 microns, and its spectrum is between millimeter waves and infrared light. The special position of terahertz signal in the electromagnetic spectrum makes it have many excellent characteristics, and it has broad application prospects in the fields of safety inspection, quality control, medical imaging, non-destructive detection and communication. Therefore, it is necessary to develop terahertz detector technology Do in-depth research. [0003] At present, terahertz detectors mainly include microbolometers, Schottky diodes, and quantum well terahertz detectors. However, microbolometers need to work at low temperatures, Schottky diodes are complex and ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01J1/46
CPCG01J1/46G01J2001/4473
Inventor 吴旭郭晓燚李连鸣何龙
Owner SOUTHEAST UNIV
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