Preparation method of As (III) ion imprinted material based on surface of MCM-41 molecular sieve

A MCM-41, ion imprinting technology, applied in the field of preparation of As ion imprinting materials, can solve the problems of slow mass transfer, difficult elution, etc., and achieve good mechanical and stability, good adsorption, good selectivity. Effect

Inactive Publication Date: 2020-10-13
GUILIN UNIVERSITY OF TECHNOLOGY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The traditional ion imprinting preparation method recognizes that the recognition sites are distributed in the imprinted material, and some of the recognition sites are embedded too deeply so that the template ions cannot reach and there are failure sites, and the mass transfer speed is slow and it is difficult to elute.

Method used

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  • Preparation method of As (III) ion imprinted material based on surface of MCM-41 molecular sieve
  • Preparation method of As (III) ion imprinted material based on surface of MCM-41 molecular sieve

Examples

Experimental program
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Effect test

Embodiment 1

[0013] A kind of As (Ⅲ) ion imprinting material based on MCM-41 molecular sieve surface, comprises the steps:

[0014] (1) Preparation of MCM-41: Weigh 1.2 g of cetyltrimethylammonium bromide into a three-necked flask, and simultaneously measure 90 mL of ammonia water and 130 mL of distilled water into the three-necked flask. Stir at 60°C until cetyltrimethylammonium bromide is completely dissolved. Under vigorous stirring, 5 mL of ethyl orthosilicate was slowly added dropwise, and stirred at a constant speed, and reacted for 6 hours. Stop the reaction and pour it out while it is hot. At room temperature, it crystallizes for 3d. The solid particles were washed to neutral and dried. Burn in a muffle furnace at 550°C for 6 hours to remove hexadecyltrimethylammonium bromide to obtain MCM-41;

[0015] (2) Weigh 0.2mmol of sodium arsenite solid in a three-necked flask, then add 10mL of ultrapure water to fully dissolve it, then weigh 80-100mL of absolute ethanol and add it to th...

Embodiment 2

[0020] (1) Preparation of MCM-41: Weigh 1.2 g of cetyltrimethylammonium bromide into a three-necked flask, and simultaneously measure 90 mL of ammonia water and 130 mL of distilled water into the three-necked flask. Stir at 60°C until cetyltrimethylammonium bromide is completely dissolved. Under vigorous stirring, 5 mL of ethyl orthosilicate was slowly added dropwise, and stirred at a constant speed, and reacted for 6 hours. Stop the reaction and pour it out while it is hot. At room temperature, it crystallizes for 3d. The solid particles were washed to neutral and dried. Burn in a muffle furnace at 550°C for 6 hours to remove hexadecyltrimethylammonium bromide to obtain MCM-41;

[0021] (2) Weigh 0.25mmol of sodium arsenite in a three-necked flask, then add 10mL of ultrapure water to fully dissolve it, then weigh 80-100mL of methanol into the three-necked flask, mix well, and then add 2mL of N -(β-aminoethyl)-γ-aminopropyltrimethoxysilane, react for 1-2h, then add the MCM-...

Embodiment 3

[0025] (1) Preparation of MCM-41: Weigh 1.2 g of cetyltrimethylammonium bromide into a three-necked flask, and simultaneously measure 90 mL of ammonia water and 130 mL of distilled water into the three-necked flask. Stir at 60°C until cetyltrimethylammonium bromide is completely dissolved. Under vigorous stirring, 5 mL of ethyl orthosilicate was slowly added dropwise, and stirred at a constant speed, and reacted for 6 hours. Stop the reaction and pour it out while it is hot. At room temperature, it crystallizes for 3d. The solid particles were washed to neutral and dried. Burn in a muffle furnace at 550°C for 6 hours to remove hexadecyltrimethylammonium bromide to obtain MCM-41;

[0026] (2) Weigh 0.3mmol of sodium arsenite solid in a three-necked flask, then add 10mL of ultrapure water to fully dissolve it, then weigh 80-100mL of methanol and add it to the three-necked flask, mix well, and then add 2mL of N-(β-aminoethyl)-γ-aminopropyltrimethoxysilane, react for 1-2h, then...

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Abstract

The invention discloses a preparation method of an As (III) ion imprinted material based on the surface of an MCM-41 molecular sieve. According to the method, N-(beta-aminoethyl)-gamma-aminopropyltrimethoxysilane is used as a functional monomer, epoxy chloropropane is used as a cross-linking agent, an MCM-41 molecular sieve is used as a carrier, and the As (III) ion imprinted material based on thesurface of the MCM-41 molecular sieve is prepared by adopting a surface imprinting method. The As (III) ion imprinted material based on the surface of the MCM-41 molecular sieve has a specific three-dimensional cavity structure, is good in mechanical property and easy to elute, can be used for specific recognition and selective removal of As (III) ions in an aqueous solution, and has the advantages of low cost, environment frendliness and the like.

Description

technical field [0001] The invention belongs to the technical field of preparation of environmental functional materials, and in particular relates to a method for preparing As(III) ion imprinted materials on the surface of MCM-41 molecular sieves. Background technique [0002] As(Ⅲ) ion has high toxicity, and it is easy to produce enrichment effect on aquatic organisms and human body, leading to the "three hazards" of teratogenicity, carcinogenicity and mutagenicity. Most of the traditional treatment methods use adsorption, which has the advantages of low cost and simple operation, but lacks pertinence and blindness to target ions. Therefore, it is particularly important to research and develop an adsorption material that can selectively separate target ions. [0003] Ion imprinting technology refers to a technology that has a selective and specific recognition function for target ions. Ion imprinted polymers use anions and cations as templates to interact with functional m...

Claims

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Application Information

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IPC IPC(8): B01J20/26B01J20/30C02F1/28C08G77/06C08G77/26C02F101/10
CPCB01J20/268B01J20/3057C02F1/288C08G77/26C08G77/06C02F2101/103
Inventor 弓亮彭芃杨勤桃黄丽丽解庆林陈南春
Owner GUILIN UNIVERSITY OF TECHNOLOGY
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