Double-sided antireflection film without reducing transmittance of 940-nanometer waveband and preparation method thereof

A transmittance and anti-reflection technology, applied in optics, instruments, optical components, etc., can solve the problems of decreased transmittance, affecting ToF imaging quality, etc., to improve yield, excellent scratch resistance, and reduce costs. Effect

Inactive Publication Date: 2020-09-25
光芯薄膜(深圳)有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

If the above-mentioned ToF camera is integrated with a 2D camera, the window glass adopts the original visible light AR processing method, which will reduce the transmittance at the near-infrared 850nm or 940nm band to 84% or below, thereby affecting the ToF imaging quality

Method used

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  • Double-sided antireflection film without reducing transmittance of 940-nanometer waveband and preparation method thereof
  • Double-sided antireflection film without reducing transmittance of 940-nanometer waveband and preparation method thereof
  • Double-sided antireflection film without reducing transmittance of 940-nanometer waveband and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0054] A traditional double-sided anti-reflection film for improving the transmittance of 420-680nm visible light band to 97.5% or above includes a substrate, a first surface AR, a first surface AF, and a second surface AR.

[0055] In this embodiment, the base material is optical glass whose refractive index at 550 nm is 1.5.

[0056] The first surface and the second surface AR are formed by alternately stacking high and low refractive index materials, the high refractive index niobium oxide; the low refractive index material is silicon oxide.

[0057] The number of AR film layers on the first surface is 6 layers.

[0058] The total thickness of the first surface AR is 254 nm.

[0059] The film structure is Glass / Nb 2 o 5 / SiO 2 / Nb 2 o 5 / SiO 2 / Nb 2 o 5 / SiO 2 / AF / Air, the film thickness of each layer is Glass / 13.94 nm / 33.14 nm / 70.58 nm / 1.75nm / 47.11 nm / 87.45 nm / AF / Air. (The group coefficients of silicon oxide and niobium oxide are both 1)

[0060] The number of ...

Embodiment 2

[0066] A double-sided anti-reflection film that does not reduce the transmittance of the 940nm band and simultaneously increases the transmittance of the 420-680nm visible light band to 97.5% or above includes a substrate, a first surface AR+AF, and a second surface AR.

[0067] In this embodiment, the base material is optical glass whose refractive index at 550 nm is 1.5.

[0068] The first surface and the second surface AR are formed by alternately stacking high and low refractive index materials, the high refractive index niobium oxide; the low refractive index material is silicon oxide.

[0069] The number of AR film layers on the first surface is 6 layers.

[0070] The total thickness of the first surface AR is 229 nm.

[0071] The film structure is Glass / Nb 2 o 5 / SiO 2 / Nb 2 o 5 / SiO 2 / Nb 2 o 5 / SiO 2 / AF / Air, the film thickness of each layer is Glass / 12.20nm / 34.64nm / 38.91nm / 22.35nm / 33.40nm / 87.50 nm / AF / Air. (wherein the group coefficient of silicon oxide i...

Embodiment 3

[0077] A double-sided anti-reflection film that does not reduce the transmittance of the 940nm band and simultaneously increases the transmittance of the 420-680nm visible light band to 97.5% or above includes a substrate, a first surface AR+AF, and a second surface AR.

[0078]In this embodiment, the base material is optical glass whose refractive index at 550 nm is 1.5.

[0079] The first surface and the second surface AR are formed by alternately stacking high and low refractive index materials, the high refractive index niobium oxide; the low refractive index material is silicon oxide.

[0080] The number of AR film layers on the first surface is 6 layers.

[0081] The total thickness of the first surface AR is 224 nm.

[0082] The film structure is Glass / Nb 2 o 5 / SiO 2 / Nb 2 o 5 / SiO 2 / Nb 2 o 5 / SiO 2 / AF / Air, the film thickness of each layer is Glass / 12.20nm / 34.64nm / 38.91nm / 22.35nm / 33.40nm / 82.50 nm / AF / Air. (The group coefficient of silicon oxide is 1.28, a...

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Abstract

The invention provides a double-sided antireflection film and a preparation method thereof, the transmittance of a 940nm waveband being not reduced, and the transmittance of a 420-680nm visible lightwaveband being improved to 97.5% or above. The transmittance of the double-sided antireflection film at the 940nm waveband is greater than or equal to that of a base material (such as glass) of the double-sided antireflection film. The average transmittance of the double-sided antireflection film at 420-680nm is greater than or equal to 97.5%. The double-sided antireflection film has a section ofarea with relatively flat transmittance in a visible light waveband of 400-800nm. Compared with existing traditional visible light AR processing, the AR processing scheme has the advantages that the visible light anti-reflection band is wider, the transmittance of the near-infrared region extending to 940 nm is not lower than that of the base material, and the requirement of a current ToF camera is met.

Description

technical field [0001] The invention relates to the field of optical films, in particular to a double-sided anti-reflection optical film and a preparation method thereof. The method is mainly used in the field of preparation of window lenses with ToF (Time of Flight, time of flight) sensors. Background technique [0002] With the continuous updating of technology, 2D imaging technology can no longer fully meet people's needs, and 3D depth imaging technology is developing rapidly. 3D depth imaging includes three mainstream technologies, namely binocular stereo imaging, structured light and time-of-flight (ToF). The 3D data generated by these technologies can realize functions such as pedestrian detection, face recognition, hand motion detection, and SLAM (simultaneous localization and mapping, real-time positioning and map construction). [0003] Due to its small size, strong anti-interference, simple preparation process, and low cost, ToF 3D sensors have begun to be adopted...

Claims

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Application Information

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IPC IPC(8): G02B1/11G02B1/18G02B1/115
CPCG02B1/11G02B1/115G02B1/18
Inventor 郭杏元曹永盛
Owner 光芯薄膜(深圳)有限公司
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