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A kind of crystal implantation doping preparation method of nano-diamond transition metal color center

A nano-diamond and transition metal technology, applied in metal material coating process, coating, gaseous chemical plating, etc., can solve the problem of difficult introduction of transition metal elements, etc., to increase nucleation density, promote formation, and facilitate luminescence stable effect

Active Publication Date: 2022-05-20
INNER MONGOLIA UNIV OF SCI & TECH
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Problems solved by technology

[0005] The object of the present invention is to provide a preparation method for implanting and doping nano-diamond transition metal color centers. By means of ultrasonic implantation, uniformly distributed nano-diamond seeds and small transition metal particles are implanted on the surface of the diamond substrate, and the transition metal The introduction of elements into the diamond growth environment conveniently and efficiently solves the problem of difficult introduction of transition metal elements in chemical vapor deposition equipment, and realizes the preparation of nano-diamonds with transition metal color centers

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  • A kind of crystal implantation doping preparation method of nano-diamond transition metal color center

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Embodiment Construction

[0035] The present invention takes the crystal implantation doping preparation method of nano-diamond titanium color center as an example, specifically elaborates its process parameters, and its preparation process refers to figure 1 , including the following steps:

[0036] Step 1: Ultrasonic cleaning the quartz substrate with acetone, absolute ethanol, and deionized water in sequence to remove organic matter and residual impurities on the surface of the quartz substrate;

[0037] Step 2: Put the cleaned quartz substrate into the deposition chamber of microwave plasma chemical vapor deposition equipment, grow a nano-diamond film on the surface of the quartz substrate, and the grown nano-diamond film forms a diamond substrate with a thickness of 600nm to 800nm;

[0038] Step 3: The diamond substrate is heated and oxidized in the air to remove the surface graphite. During the heating process, the heating and cooling rate is 200°C / h, the heating temperature is 550°C, and the hol...

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Abstract

The invention relates to the field of nano-diamond color centers, in particular to a preparation method for implanting and doping nano-diamond transition metal color centers, comprising the following steps: growing a nano-diamond film on the surface of a quartz substrate to form a diamond substrate, and removing surface graphite from the diamond substrate Afterwards, ultrasonic cleaning is carried out; the nano-diamond colloid solution and transition metal powder are evenly mixed to prepare a mixed crystal planting liquid; the diamond substrate is placed in the prepared mixed crystal planting liquid, and ultrasonic crystal planting is performed to obtain a diamond substrate with uniform distribution of mixed crystal seeds Re-grow a nano-diamond film on the surface of the diamond substrate after the crystal planting is completed; then perform high-temperature annealing and remove the surface graphite treatment to obtain a relatively pure diamond with a transition metal color center. The invention implants evenly distributed mixed crystal seeds on the surface of the diamond substrate by means of ultrasonic crystal planting, introduces transition metal elements into the diamond growth environment, and conveniently and efficiently realizes the preparation of nano-diamond transition metal color centers.

Description

technical field [0001] The invention relates to the field of diamond color centers, in particular to a method for preparing nano-diamond transition metal color centers by planting and doping. Background technique [0002] Diamond color centers are photostable solid-state sources of single photons at room temperature, and can be used as carriers of quantum information to complete tasks such as quantum communication or quantum computing; they also play an important role in biomarkers and nanomicroscopy. In recent years, my country's technology in the application of quantum communication technology has developed rapidly. However, there are relatively few studies on the preparation of single photon sources in my country. The single photon sources used by many research groups come from abroad. Therefore, in order to ensure the smooth development of our country in the fields of quantum information and quantum computing, it is necessary to strengthen the research on the preparati...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C16/27C23C16/56C23C16/511
CPCC23C16/278C23C16/274C23C16/56
Inventor 谭心陈路华刘志鑫未雪原
Owner INNER MONGOLIA UNIV OF SCI & TECH
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