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Crystal planting doping preparation method of nano-diamond transition metal color center

A nano-diamond and transition metal technology, which is applied in the coating process of metal materials, gaseous chemical plating, coating, etc., can solve problems such as the difficulty of introducing transition metal elements, and achieve the effect of promoting production and strong adaptability

Active Publication Date: 2020-09-25
INNER MONGOLIA UNIV OF SCI & TECH
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Problems solved by technology

[0005] The object of the present invention is to provide a preparation method for implanting and doping nano-diamond transition metal color centers. By means of ultrasonic implantation, uniformly distributed nano-diamond seeds and small transition metal particles are implanted on the surface of the diamond substrate, and the transition metal The introduction of elements into the diamond growth environment conveniently and efficiently solves the problem of difficult introduction of transition metal elements in chemical vapor deposition equipment, and realizes the preparation of nano-diamonds with transition metal color centers

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  • Crystal planting doping preparation method of nano-diamond transition metal color center

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[0035] The present invention takes the crystal implantation doping preparation method of nano-diamond titanium color centers as an example, specifically elaborates its process parameters, and its preparation process refers to figure 1 , including the following steps:

[0036] Step 1: Ultrasonic cleaning of the quartz substrate with acetone, absolute ethanol, and deionized water in sequence to remove organic matter and residual impurities on the surface of the quartz substrate;

[0037] Step 2: Put the cleaned quartz substrate into the deposition chamber of microwave plasma chemical vapor deposition equipment, grow a nano-diamond film on the surface of the quartz substrate, and the grown nano-diamond film forms a diamond substrate with a thickness of 600nm to 800nm;

[0038] Step 3: The diamond substrate is heated and oxidized in the air to remove the surface graphite. During the heating process, the heating and cooling rate is 200°C / h, the heating temperature is 550°C, and the...

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Abstract

The invention relates to the field of nano-diamond color centers, in particular to a crystal planting doping preparation method of a nano-diamond transition metal color center. The method comprises the following steps that a nano-diamond film is grown on the surface of a quartz substrate to form a diamond substrate, and ultrasonic cleaning is carried out after the surface of the diamond substrateis subjected to surface graphite removing treatment; a nano-diamond colloidal solution and transition metal powder are uniformly mixed to prepare a mixed crystal planting solution; the diamond substrate is placed in the prepared mixed crystal planting solution to carry out ultrasonic crystal planting so as to obtain the diamond substrate with uniformly-distributed mixed seed crystals; the nano-diamond film is regrown on the surface of the diamond substrate after crystal planting is completed; and then high-temperature annealing and surface graphite removing treatment are carried out to obtainpure diamond with the transition metal color center. According to the method, the uniformly-distributed mixed seed crystals are planted into the surface of the diamond substrate in an ultrasonic crystal planting manner, and transition metal elements are introduced into a diamond growth environment, so that the preparation of the nano-diamond transition metal color center is conveniently and efficiently realized.

Description

technical field [0001] The invention relates to the field of diamond color centers, in particular to a method for preparing nano-diamond transition metal color centers by planting and doping. Background technique [0002] Diamond color centers are photostable solid-state sources of single photons at room temperature, and can be used as carriers of quantum information to complete tasks such as quantum communication or quantum computing; they also play an important role in biomarkers and nanomicroscopy. In recent years, my country's technology in the application of quantum communication technology has developed rapidly. However, there are relatively few studies on the preparation of single photon sources in my country. The single photon sources used by many research groups come from abroad. Therefore, in order to ensure the smooth development of our country in the fields of quantum information and quantum computing, it is necessary to strengthen the research on the preparati...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/27C23C16/56C23C16/511
CPCC23C16/278C23C16/274C23C16/56
Inventor 谭心陈路华刘志鑫未雪原
Owner INNER MONGOLIA UNIV OF SCI & TECH
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