Semiconductor structure and manufacturing method thereof

Abstract

The invention discloses a semiconductor structure and a manufacturing method thereof. The semiconductor structure comprises a substrate, an N-type doped region, a metal structure, a first P-type wellregion and a first P-type contact region, wherein the N-type doped region is located in the substrate; the metal structure is located on the surface of the substrate and comprises a middle part and anedge part, and the middle part is in contact with the N-type doped region to form a Schottky diode; the first P-type well region is located in the N-type doped region, is in contact with the edge part and separates the edge part from the N-type doped region; and the first P-type contact region is located in the first P-type well region and is separated from the edge part, the doping concentrationof the first P-type contact region is higher than that of the first P-type well region, and the first P-type well region is used for receiving the anode voltage of the Schottky diode in a state thatthe first P-type contact region is grounded. The semiconductor structure maintains the low voltage drop and high frequency characteristics of the Schottky diode on the premise of improving the breakdown voltage of the Schottky diode and reducing the leakage current of the Schottky diode.

Description

technical field [0001] The present application relates to the field of semiconductor device fabrication, and more particularly, to semiconductor structures and fabrication methods thereof. Background technique [0002] Schottky Barrier Diode (SBD) has the advantages of high switching frequency and low forward voltage, and is widely used in electronic circuits. Such as figure 1 As shown, the SBD in the prior art includes a Schottky junction formed by a metal structure 10 and an N-type semiconductor 20 with a lower doping concentration, wherein the Schottky junction formed between the middle part of the metal structure 10 and the N-type semiconductor 20 The Terkyn junction is planar, and the Schottky junction formed between the edge portion of the metal structure 10 and the N-type semiconductor 20 is arcuate. Under the condition that N-type semiconductor 20 is depleted by applying a positive voltage to N-type semiconductor 20, since the Schottky junction (depletion layer) co...

AI Technical Summary

Problems solved by technology

Under the condition that N-type semiconductor 20 is depleted by applying a positive voltage to N-type semiconductor 20, since the Schottky junction (depletion layer) corresponding to the edge portion of metal structure 10 has a certain curvature (refer to figure 1 The dotted line in ), which leads to the large electric field here, which in turn causes interband tunneling current, which increases the reverse leakage current of SBD

When the electric field is too large and continues to increase, the SBD will break down early, resulting in a low breakdown voltage of the SBD

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