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Ultraviolet photodiode based on CuAlO2/SiC and preparation method thereof

An ultraviolet light and diode technology, applied in circuits, electrical components, semiconductor devices, etc., can solve the problem of low P-type silicon carbide doping concentration, and achieve high critical breakdown electric field strength, excellent detection performance, and improved reliability. Effect

Active Publication Date: 2020-09-15
三立智能电气有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In general, the P-type doping of silicon carbide is doped with Al. Since Al has a high ionization energy at room temperature, it cannot be completely ionized at room temperature, resulting in a low doping concentration of P-type silicon carbide.

Method used

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  • Ultraviolet photodiode based on CuAlO2/SiC and preparation method thereof
  • Ultraviolet photodiode based on CuAlO2/SiC and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0063] A kind of CuAlO of the present invention 2 / SiC UV photodiodes, structured as figure 1 As shown, the top electrode 1 and the bottom electrode 5 are included, and the P-type crystal CuAlO is arranged in sequence from the top electrode 1 to the bottom electrode 5 between the two electrodes. 2 Thin film 2, I-type SiC thin film 3 and N-type SiC substrate 4.

[0064] The material of the top electrode 1 and the bottom electrode 5 is a mixture of any of the metal materials of Au, Al, Ni, Cu, and Pb, or an alloy containing one or any of the above-mentioned mixed metal materials, or the conductivity of ITO compound.

[0065] The N-type SiC substrate 4 is a nitrogen-doped SiC material; the I-type crystalline SiC thin film is an unintentionally doped SiC layer, and the doping concentration is 10 15 cm ～3 .

[0066] P-type crystal CuAlO 2 The doping concentration of film 2 is 10 17 cm ～3 .

[0067] a CuAlO 2 / SiC ultraviolet photodiode preparation method, the flow chart i...

Embodiment 2

[0088] A kind of CuAlO of the present invention 2 / SiC UV photodiodes, structured as figure 1 As shown, the top electrode 1 and the bottom electrode 5 are included, and the P-type crystal CuAlO is arranged in sequence from the top electrode 1 to the bottom electrode 5 between the two electrodes. 2 Thin film 2, I-type SiC thin film 3 and N-type SiC substrate 4.

[0089] The material of the top electrode 1 and the bottom electrode 5 is Au.

[0090] The N-type SiC substrate 4 is a nitrogen-doped SiC material; the I-type crystalline SiC thin film is an unintentionally doped SiC layer, and the doping concentration is 10 15 cm ～3 .

[0091] P-type crystal CuAlO 2 The doping concentration of film 2 is 10 18 cm ～3 .

[0092] a CuAlO 2 / SiC ultraviolet photodiode preparation method, the flow chart is as figure 2 As shown, the specific steps are as follows:

[0093] Step 1, cleaning the N-type SiC substrate 4, and drying it for later use;

[0094] Step 2, growing an intrins...

Embodiment 3

[0113] A kind of CuAlO of the present invention 2 / SiC UV photodiodes, structured as figure 1 As shown, the top electrode 1 and the bottom electrode 5 are included, and the P-type crystal CuAlO is arranged in sequence from the top electrode 1 to the bottom electrode 5 between the two electrodes. 2 Thin film 2, I-type SiC thin film 3 and N-type SiC substrate 4.

[0114] The material of the top electrode 1 and the bottom electrode 5 is a mixture of Ni, Cu, and Pb metal materials.

[0115] The N-type SiC substrate 4 is a nitrogen-doped SiC material; the I-type crystalline SiC thin film is an unintentionally doped SiC layer, and the doping concentration is 10 15 cm ～3 .

[0116] P-type crystal CuAlO 2 The doping concentration of film 2 is 10 18 cm ～3 .

[0117] a CuAlO 2 / SiC ultraviolet photodiode preparation method, the flow chart is as figure 2 As shown, the specific steps are as follows:

[0118] Step 1, cleaning the N-type SiC substrate 4, and drying it for later ...

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Abstract

The invention discloses a CuAlO2 / SiC ultraviolet photodiode and a preparation method thereof. The photodiode comprises a top electrode and a bottom electrode. A P-type crystal CuAlO2 film, an I-type SiC film and an N-type SiC substrate are sequentially arranged between the two electrodes from the top electrode to the bottom electrode, and the invention also discloses a preparation method of the CuAlO2 / SiC ultraviolet photodiode. The method comprises the following steps: cleaning the N-type SiC substrate, and blow-drying for later use; growing an intrinsic SiC homogeneous epitaxial layer on thecleaned N-type SiC substrate; growing a P-type crystal CuAlO2 heteroepitaxial layer on the intrinsic SiC homogeneous epitaxial layer; manufacturing a top electrode on the P-type crystal CuAlO2 heteroepitaxial layer; manufacturing bottom electrodes on lower surface of N-type SiC substrate, and finally forming CuAlO2 / SiC ultraviolet photodiode. The CuAlO2 / SiC ultraviolet photodiode and the manufacturing method thereof have the advantages that the photoelectric response is good, the stability is good, the reaction is sensitive, and the processing technology repeatability is good.

Description

technical field [0001] The invention belongs to the field of ultraviolet photoelectric detection application technology, in particular to a CuAlO 2 / SiC ultraviolet photodiode, the present invention also relates to a kind of CuAlO 2 / SiC UV photodiode preparation method. Background technique [0002] Ultraviolet detection technology is one of the photoelectric detection technologies developed rapidly in recent years. Ultraviolet detectors have important uses in missile early warning, water quality monitoring and disaster weather forecasting. Silicon carbide (4H-SiC), as a representative of the third-generation wide bandgap semiconductor material, has properties such as large bandgap, high breakdown electric field, high thermal conductivity, high electron saturation mobility, and small dielectric constant, making it widely used in Ultraviolet photodetection devices, power electronics and lasers have great application potential. [0003] 4H-SiC PIN UV detector has the char...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0336H01L31/0352H01L31/105H01L31/18
CPCH01L31/0336H01L31/105H01L31/035272H01L31/18
Inventor 胡继超李丹丹
Owner 三立智能电气有限公司
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