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Tellurene-based polarized light photoelectric detector and preparation method and application thereof

A photodetector and polarized light technology, applied in the direction of circuits, electrical components, semiconductor devices, etc., to achieve the effect of simple steps, efficient detection, and high detection limit

Inactive Publication Date: 2020-09-15
SHENZHEN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, there is currently no photodetector prepared on the market that utilizes the special photoresponse function of tellurene

Method used

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  • Tellurene-based polarized light photoelectric detector and preparation method and application thereof
  • Tellurene-based polarized light photoelectric detector and preparation method and application thereof
  • Tellurene-based polarized light photoelectric detector and preparation method and application thereof

Examples

Experimental program
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Effect test

Embodiment 1

[0041] Such as figure 2 Shown, a kind of preparation method of polarized light photodetector based on tellurene, this method comprises the following steps:

[0042] Substrate preparation: use a silicon wafer knife to cut a commercial standard 4-inch p-type doped single-polished silicon oxide wafer (the thickness of the silicon part is 500um, the resistivity is 1-10Ω·cm, SiO 2 Thickness is 285nm) cut into 1×1cm 2 size. Afterwards, soak in acetone solution and isopropanol solution, ultrasonicate for 5 minutes respectively, and then blow dry with nitrogen to obtain a silicon wafer substrate.

[0043] Sample preparation: Tellurene is stored in ethanol solution. After ultrasonicating the tellurene stored in ethanol solution for 1 minute, use a dropper to take 3 drops onto the silicon wafer substrate prepared in the substrate preparation step, and use Blow dry with nitrogen.

[0044] Uniform glue drying: Spin-coat photoresist PMMA A4 on the above-mentioned silicon wafer substra...

Embodiment 2

[0048] A test method for linearly polarized light detection based on tellurene polarized light photodetectors, the method comprising the following steps:

[0049] (1) Take the tellurene-based polarized light photodetector prepared in Example 1, and cut the silicon dioxide layer with a silicon wafer at a corner of the surface of the silicon wafer.

[0050] (2) Use a semiconductor characteristic analyzer to perform the test, place the silicon wafer on the supporting probe platform, and find the exact position of the detector on the silicon wafer through the CCD imaging system.

[0051] (3) Operate the probe movement knob of the probe platform, so that the three probes respectively contact the source and drain electrodes of the detector, and the silicon dioxide layer cut in step (1) (as the back gate electrode of the detector) .

[0052] (4) Run the test software of the semiconductor characteristic analyzer, select the voltage scanning mode for the drain probe, the scanning rang...

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Abstract

The invention provides a tellurene-based polarized light photoelectric detector, which comprises a substrate, a tellurene layer arranged on the substrate, and a source electrode and a drain electrodearranged on the tellurene layer, wherein the source electrode and the drain electrode are indirectly connected through the tellurene layer; and the thickness of the tellurene layer is less than or equal to 20nm. The tellurene-based polarized light photoelectric detector has the advantages of high polarized light response difference, small size, portability, convenience in operation, simplicity indata processing and the like. The invention also provides a preparation method of the tellurene-based polarized light photoelectric detector and an application of the tellurene-based polarized light photoelectric detector in polarized light detection.

Description

technical field [0001] The present invention relates to the field of semiconductor electronic devices, in particular to a polarized light photodetector based on tellurene, the invention also relates to a preparation method of the polarized light photodetector based on tellene, and the present invention also relates to the polarized photodetector based on tellene Applications of photoelectric detectors in the field of light detection. Background technique [0002] The asymmetry between the vibration direction and the propagation direction of isotropic light during propagation is called polarization, and polarization is one of the important characteristics of light as an electromagnetic wave. Polarized light detection has shown broad application prospects in linear polarizers (LPL), polarization remote sensing, and medical diagnosis and treatment. [0003] The inspection of linearly polarized light has two meanings: to determine whether the tested light is linearly polarized ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0272H01L31/119H01L31/18
CPCH01L31/0272H01L31/119H01L31/18Y02P70/50
Inventor 张晗高珊
Owner SHENZHEN UNIV
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