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Thin-film transistor and thin-film transistor preparation method

A technology of thin film transistor and alloy film layer, applied in the field of OLED display, can solve the problem of easy peeling off of the photoresist layer, and achieve the effect of alleviating easy peeling off

Inactive Publication Date: 2020-08-28
SHENZHEN CHINA STAR OPTOELECTRONICS TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The embodiment of the present invention provides a thin film transistor manufacturing method and a thin film transistor, which can alleviate the technical problem that the photoresist layer is easy to peel off in the current thin film transistor manufacturing process

Method used

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Embodiment Construction

[0033] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the drawings in the embodiments of the present invention. Apparently, the described embodiments are only some of the embodiments of the present invention, but not all of them. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative efforts fall within the protection scope of the present invention.

[0034] In describing the present invention, it should be understood that the terms "center", "longitudinal", "transverse", "length", "width", "thickness", "upper", "lower", "front", " Orientation indicated by rear, left, right, vertical, horizontal, top, bottom, inside, outside, clockwise, counterclockwise, etc. The positional relationship is based on the orientation or positional relationship shown in the drawings, which is only for the convenience of describing the pr...

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Abstract

The embodiment of the invention provides a thin film transistor, which comprises a substrate, an active layer located above the substrate, a gate insulating layer located on the active layer, a firstbarrier layer, a gate, a second barrier layer and a first alloy film layer located on the second barrier layer, wherein the first barrier layer, the gate and the second barrier layer are stacked on the gate insulating layer; the hydrophobicity of the first alloy film layer is greater than that of the second barrier layer; and the binding force of the three-layer metal structure and a photoresist layer is enhanced by arranging the first alloy film layer on the second barrier layer, and the photoresist layer is prevented from peeling off in the preparation process.

Description

technical field [0001] The invention relates to the technical field of OLED display, in particular to a thin film transistor and a preparation method of the thin film transistor. Background technique [0002] Existing thin film transistors usually adopt a three-layer metal structure to prevent the peeling of the dielectric layer. The uppermost barrier layer of the three-layer metal structure has a strong hydrophilicity, and the bonding force with the photoresist layer arranged on the barrier layer Weaker, so there is a technical problem that the photoresist layer is easy to peel off in the preparation process of thin film transistors. Contents of the invention [0003] Embodiments of the present invention provide a thin film transistor manufacturing method and a thin film transistor, which can alleviate the technical problem that the photoresist layer is easily peeled off in the current thin film transistor manufacturing process. [0004] The present invention provides a ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/786H01L21/336H01L29/423H01L27/32
CPCH01L29/786H01L29/66742H01L29/42384H10K59/12
Inventor 胡小波谭敏力彭钊刘健杨一峰
Owner SHENZHEN CHINA STAR OPTOELECTRONICS TECH CO LTD
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