Method for producing wafer by combining composite adhesive film with through hole glass carrier plate structure

Abstract

The invention discloses a method for producing a wafer by combining a composite adhesive film with a through hole glass carrier plate structure. The invention is characterized in that the method for producing the wafer includes the steps of S1, forming holes in the glass carrier plate; S2, adhering the composite adhesive film to a glass carrier plate, enabling the wafer to be accurately aligned tothe glass carrier plate by adopting an optical mechanism, then placing the front surface of the wafer on the composite adhesive film, and adhering the wafer to the glass carrier plate by adopting a film laminating, pressing and heating mode; S3, removing the composite adhesive film in a glass window hole, and thinning crystal grains. According to the production method of the wafer, the compositeadhesive film and the windowed glass carrier plate are combined together to replace a traditional adhesive, so that the situation that the subsequent process is influenced due to the fact that a window / TGV communication hole is blocked by uneven coating and blocking of the adhesive is avoided; the glass carrier plate with the through holes and the wafer are bonded together through the composite adhesive film, so that damage to the wafer caused by windowing after bonding is avoided, the production efficiency is improved, and the production cost is reduced.

Description

technical field [0001] The invention relates to a method for producing a wafer, in particular to a method for producing a wafer by combining a composite adhesive film with a through-hole glass carrier plate structure. Background technique [0002] In order to improve the electronic circuit performance of electronic components, the chip thickness can be reduced, the on-resistance can be reduced, the heat dissipation capability of the components can be optimized, and the performance requirements of high-current conduction and high-frequency switching of the electronic circuit of the components can be improved. The thinned chip grains meet the Package thinning trend. It can meet the requirements of multilayer and 3D packaging of power components. In order to meet the requirements of wafer thinning, a circular glass carrier with a thickness of 400-750 microns is used to temporarily bond the wafers to transfer the wafers for wafer thickness thinning and back metallization proces...

AI Technical Summary

Problems solved by technology

In the prior art, most of the wafers are bonded by coating an adhesive on the wafer, and coating the glass carrier with a UV or deconstructable release layer to complete the bonding of the wafer and the glass, and then thinning, yellow After optical patterning, ion implantation and metal coating and other processes, debond the wafer to continue the dicing and packaging process of the wafer. D. 3D uses a glass carrier with through-holes (TGV), and the current process will not be implemented. Since the release layer of the coating method is dissolved in an organic solvent, it must leak or even fill into the window or TGV through-holes during coating. Seriously hinder the subsequent metal filling process of through-hole communication, and it is difficult to form a uniform coating layer when coating the surface glass. In the prior art, the glass carrier is opened after bonding, resulting in damage to the wafer

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