Bridge GaN device and preparation method thereof

Abstract

The invention provides a bridge type GaN device and a preparation method thereof. The preparation method comprises the steps of providing a semiconductor substrate with a buffer structure and an epitaxial structure, forming a passivation layer on the epitaxial structure, preparing a source electrode and a drain electrode, preparing a gate trench, and forming a bridge type gate structure. Accordingto the invention, the power density of a transistor is increased by stacking a plurality of two-dimensional electron gas channels; through the design of the bridge type gate structure, based on a gate embedded in the epitaxial structure, the drain current is controlled by modulating the width of two-dimensional electron gas through a transverse gate electric field, so that the roll-off of transconductance derived from electron speed modulation is reduced, the peak value of transconductance is reduced, the planarization of transconductance change is realized, and the linearity of a device is improved; based on the design of a suspended bridge type gate structure, a high electric field area on the surface is eliminated, the problems of caused current attenuation and collapse are solved, thelack of a contact top gate also eliminates a vertical electric field at a gate drain end, the inverse piezoelectric effect is greatly inhibited, and the reliability is improved.

Description

technical field [0001] The invention belongs to the technical field of GaN device preparation, and in particular relates to a bridge-type GaN device and a preparation method thereof. Background technique [0002] Today, human production and life are inseparable from electricity, and with the improvement of people's awareness of energy conservation, power semiconductor devices with high conversion efficiency have become a research hotspot at home and abroad. Power semiconductor devices are widely used, such as household appliances, power converters and industrial controls, etc. Different power semiconductor devices are used under different rated voltages and currents. High Electron Mobility Transistor (HEMT, High Electron Mobility Transistor) is a hot spot of development at home and abroad, and has made breakthroughs in many fields, especially in high temperature, high power and high frequency, which has broad application prospects. [0003] Due to its excellent material pro...

AI Technical Summary

Problems solved by technology

[0005] In view of the above-mentioned shortcomings of the prior art, the purpose of the present invention is to provide a bridge-type GaN device and its preparation method, which are used to solve the problems of GaN device surface prone to defects, easy current collapse and GaN device withstand voltage, Problems such as power density and linearity are difficult to improve

Images