Semiconductor processing equipment and process control method thereof

Abstract

The embodiment of the invention provides semiconductor processing equipment and a process control method thereof. The semiconductor processing equipment comprises a cavity, a lifting assembly, a baseand a temperature measuring assembly, wherein the base and the temperature measuring assembly are arranged in the cavity; the lifting assembly is used for bearing and driving wafers to be selectivelylocated at multiple stations above the base, the multiple stations correspond to the multiple target temperature values in a one-to-one mode, and the distance between each station and an upper surfaceof the base is inversely proportional to the corresponding target temperature value; and the temperature measuring assembly is arranged at positions where the lifting assembly is in contact with thewafers and is used for acquiring actual measurement temperature values of the wafers in real time. According to the embodiment of the invention, the purpose of adjusting the target temperature value according to different types of wafers and different processes is achieved, and the requirement for temperature change in the process can be met such that the yield of the wafers is effectively improved, and the process efficiency is greatly improved.

Description

technical field [0001] The present application relates to the technical field of semiconductor processing, and in particular, the present application relates to a semiconductor processing equipment and a process control method thereof. Background technique [0002] Currently, metal etching equipment is an indispensable equipment in the manufacturing process of integrated circuits (ICs). A general metal ion plasma etching equipment includes: a loading and unloading module, a transfer module, a calibration module, two reaction chambers, two degumming chambers and a cooling (Cooling) chamber. The transfer module is connected to the reaction chamber module, and is responsible for transferring the wafer to be processed to the reaction chamber, and performs the etching process in the reaction chamber. After the process is completed, the wafer is transferred to the deglue chamber through the transfer module. The deglue chamber performs the deglue process. After the process is comp...

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Problems solved by technology

[0005] In view of the shortcomings of the existing methods, this application proposes a semiconductor processing equipment and its process control method to solve the problem that the glue removal chamber in the prior art cannot adjust the temperature according to the wafer type and process, and cannot meet the requirements of the process. Technical issues with temperature changes

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