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Quantum dot light-emitting diode and preparation method thereof

A quantum dot light-emitting and diode technology, which is applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve the problems of short working life of quantum dot light-emitting diodes

Active Publication Date: 2020-07-07
TCL CORPORATION
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The purpose of the present invention is to provide a quantum dot light-emitting diode and its preparation method, aiming to solve the problem of short working life of the existing quantum dot light-emitting diode

Method used

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  • Quantum dot light-emitting diode and preparation method thereof
  • Quantum dot light-emitting diode and preparation method thereof
  • Quantum dot light-emitting diode and preparation method thereof

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preparation example Construction

[0052] Such as Figure 5 As shown, some embodiments of the present invention provide a method for preparing a quantum dot light-emitting diode, comprising the following steps:

[0053] S01. Provide an anode substrate, the surface of the anode substrate is provided with an initial first metal oxide nanoparticle layer, and the first metal oxide nanoparticles in the initial first metal oxide nanoparticle layer are electron transport materials;

[0054] S02. Evaporating an initial second metal layer on the initial first metal oxide nanoparticle layer, and performing heat annealing treatment on the anode substrate on which the initial second metal layer is evaporated.

[0055] In some embodiments of the present invention, the anode substrate may include a substrate, an anode stacked on the surface of the substrate, and a quantum dot light-emitting layer stacked on the surface of the anode; in still other embodiments of the present invention, the anode substrate It may include a su...

Embodiment 1

[0081] A method for preparing a positive top-emitting quantum dot light-emitting diode, comprising the following steps:

[0082] On the ITO substrate, spin-coat PEDOT:PSS, spin-coat at a speed of 5000rmp for 30 seconds, and then heat at a temperature of 150°C for 15 minutes to prepare a hole injection layer;

[0083] Spin-coat TFB on the hole injection layer at a speed of 8 mg / mL, spin-coat at a speed of 3000 rpm for 30 seconds, and then heat at a temperature of 150° C. for 30 minutes to prepare a hole-transport layer;

[0084] Spin-coat quantum dots on the hole transport layer at a speed of 20 mg / mL, and spin-coat for 30 seconds at a speed of 2000 rpm to prepare a quantum dot light-emitting layer;

[0085] Spin-coat nano-ZnO on the quantum dot light-emitting layer at a speed of 30 mg / mL, spin-coat for 30 seconds at a speed of 3000 rpm, and then heat for 30 minutes at a temperature of 80 ° C to prepare a nano-ZnO layer;

[0086] The vacuum degree is not higher than 3×10 -4 U...

Embodiment 2

[0090] A method for preparing an inverted bottom-emitting quantum dot light-emitting diode, comprising the following steps:

[0091] On the ITO substrate, the vacuum degree is not higher than 3×10 -4 Evaporate Ag under the condition of Pa, the speed is 1 Angstrom / second, the time is 100 seconds, and the preparation thickness is the silver layer of 10nm;

[0092] Spin-coat nano-ZnO on the silver layer at a speed of 30 mg / mL at a speed of 3000, spin-coat for 30 seconds at a speed of 3000 rpm, and then heat at a temperature of 80 ° C for 30 minutes to prepare a nano-ZnO layer;

[0093] Place the sample on a heating plate pre-set to 120°C for 30 minutes to prepare the laminate;

[0094] Spin-coat quantum dots on the laminate at a speed of 20 mg / mL, and spin-coat for 30 seconds at a speed of 2000 rpm to prepare a quantum dot light-emitting layer;

[0095] Spin-coat PVK on the quantum dot light-emitting layer at a speed of 8 mg / mL, spin-coat for 30 seconds at a speed of 3000 rpm, ...

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Abstract

The invention provides a quantum dot light emitting diode which comprises: a cathode and an anode which are oppositely arranged; a quantum dot light-emitting layer that is arranged between the cathodeand the anode; a lamination layer that is arranged between the cathode and the quantum dot light-emitting layer and comprises a first metal oxide nanoparticle layer and a mixed material layer arranged on the surface, opposite to the quantum dot light-emitting layer, of the first metal oxide nanoparticle layer, wherein the mixed material layer comprises first metal oxide nano particles and secondmetal oxide dispersed in gaps of the first metal oxide nano particles, and the first metal oxide nano particles in the first metal oxide nano particle layer are electron transport materials; in addition, in the mixed material layer, the content of the second metal oxide is gradually increased along the direction from the quantum dot light-emitting layer to the cathode.

Description

technical field [0001] The invention belongs to the field of display technology, in particular to a quantum dot light-emitting diode and a preparation method thereof. Background technique [0002] Light-emitting diodes based on semiconductor quantum dots not only have the characteristics of high color purity, adjustable emission wavelength, and high driving efficiency, but are also easy to prepare by solution method, which can reduce the preparation cost and process complexity of light-emitting diodes, and will be an important development of the future display industry. technology. After nearly 25 years of development, the efficiency of quantum dots has been increased from 0.01% to more than 20%, and an external quantum yield of 27.6% (green) has been obtained through stacked structures. From the perspective of device efficiency, quantum dot light-emitting diodes ( QLED) is already pretty close to organic light-emitting diodes (OLEDs). However, despite the above-mentioned ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/50H01L51/56
CPCH10K50/115H10K50/166H10K2101/80H10K50/171H10K50/16H10K71/00H10K50/84H10K71/40H10K2102/00H10K2102/321H10K2102/331H10K2102/351H10K2102/3026
Inventor 黎瑞锋钱磊曹蔚然刘文勇
Owner TCL CORPORATION
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