Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Linearized energetic radio-frequency plasma ion source

A plasma and ion source technology, applied in the field of generating gas discharge, can solve impractical problems

Active Publication Date: 2020-06-05
덴톤배큠엘엘씨
View PDF3 Cites 5 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

While substrate biasing may be effective for static (i.e., stationary) small area (e.g., less than about one square meter) applicators) where large area substrates (e.g. flexible webs, display glass, architectural glass, vehicle glass, photovoltaic panels, etc.) move through the applicator

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Linearized energetic radio-frequency plasma ion source
  • Linearized energetic radio-frequency plasma ion source
  • Linearized energetic radio-frequency plasma ion source

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0091] By way of example only and not limitation, the use of image 3The exemplary plasma ion source 300 shown in FIG. 3 forms a DLC coating on the top surface of a glass substrate. For this example, it is assumed that plasma ion source 300 has an overall length of about 635 mm and a width of about 178 mm; the distance between extraction grid 334 and the top surface of the glass substrate is fixed at about 172 mm. Argon feed gas was supplied to plasma ion source 300 through ceramic porous alumina feed conduit 310 at a rate of about 80 standard cubic centimeters per minute (sccm). Precursor gas was supplied to the vacuum chamber through a precursor gas feed conduit approximately 483 mm in length, which was positioned adjacent to a fixed non-magnetic stainless steel substrate support approximately 431 mm in length and approximately 305 mm in width. The precursor gas feed conduit was positioned approximately 83 mm in front of the top surface of the substrate support and position...

Embodiment 2

[0098] Figure 7 is a graph 700 depicting bias voltage and pulse frequency of the bias voltage versus Figure 6 The effect of ion current density drawn by the exemplary plasma ion source 602 is shown. Depend on Figure 7 The results represented by the illustrated graph 700 are obtained using settings in the outgoing grid component ( Figure 6 Downstream of 638 in , at the base ( Figure 6 640) in front of the Faraday cup detector at a distance of about four inches. The Faraday cup measures from the plasma ion source ( Figure 6 602) in the ion current density (unit: μA / cm 2 ). Such as Figure 7 The graph 700 shows, for the bias supply ( Figure 6 The measured ion current density is plotted against the bias voltage levels (unit: volts) for a number of different pulse frequencies (unit: KHz) (ie 300KHz, 200KHz, 100KHz, 50KHz and 0KHz (ie DC)) in 630 in . In this example, plasma ion source 602 operates with argon as the feed gas, which is passed through gas feed conduit ...

Embodiment 3

[0101] Figure 8 is a description according to an illustrative embodiment of the invention of the bias voltage pair derived from Figure 6 A graph 800 of the effect of ion energy for an exemplary plasma ion source 602 is shown. Depend on Figure 8 The ion energy distribution (dI / dE) results represented by the illustrated graph 800 were obtained by using the settings in the extraction grid assembly ( Figure 6 Downstream of 638), base ( Figure 6 Obtained by measuring ion energy (unit: eV) with a Retarding Field Energy Analyzer (RFEA) (for example, manufactured by Impedans Ltd. of Dublin, Ireland) in front of 640 in . Plasma ion source 602 ( Figure 6 ) operated at an operating pressure of 15 mTorr with an argon feed gas flow rate of 80 sccm and applied to the inductive antenna 610 with 500 watts of RF power ( Figure 6 ).

[0102] When no bias voltage is applied to the plasma chamber 604 ( Figure 6 ), an average ion energy of about 45eV is measured, and the ion energy ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
lengthaaaaaaaaaa
widthaaaaaaaaaa
diameteraaaaaaaaaa
Login to View More

Abstract

A plasma ion source includes a plasma chamber body having at least one inlet for introducing a feed gas to an interior of the plasma chamber body. The plasma chamber body is electrically isolated froma vacuum chamber attached to the plasma chamber body. An inductive antenna in an interior of the plasma chamber body is configured to supply a source of electromagnetic energy as a function of an RFvoltage supplied thereto. The plasma ion source includes an extraction grid disposed at an end of the plasma chamber body. A voltage difference between the extraction grid and plasma chamber body accelerates charged species in a plasma discharge to generate an output quasi-neutral plasma ion beam. A bias voltage applied to the plasma chamber body includes a portion of the RF voltage supplied to the antenna combined with a pulsed DC voltage.

Description

[0001] Cross References to Related Applications [0002] This application claims protection to U.S. Provisional Patent Application 62 / 585,126, filed November 13, 2017, entitled "Linear High Energy Radio Frequency Induced Plasma Ion Source" Bulk Ion Source," U.S. Patent Application 16 / 184,177, the entire disclosure of which is expressly incorporated herein by reference in its entirety for all purposes. technical field [0003] The present invention relates generally to the electrical, electronic and computer fields, and more particularly to methods and apparatus for generating gas discharges (plasmas). Background technique [0004] Plasma systems are important for the production, processing and handling of solid-state materials, among other applications. Plasma reactors, also known as plasma sources, can be used in many plasma processing applications, including but not limited to thin film growth, dispersion, etching and cleaning. Plasma sources are typically used to deposi...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01J23/08H01J37/32H03K3/011H05B6/72H05H1/32F28D1/053
CPCH01J37/3211H01J37/32422H01J37/32174H01J2237/061H01J2237/08H01J2237/002H01J37/32357C23C16/26C23C16/507C23C16/545C23C16/45578H01J37/32522C23C16/505H01J2237/3321
Inventor 克雷格·A·奥滕
Owner 덴톤배큠엘엘씨
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com