Graphene homogeneous p-n junction structure and preparation method thereof

Abstract

The invention discloses a graphene homogeneous p-n junction structure and a preparation method thereof. The graphene homogeneous p-n junction structure comprises a neutral graphene layer, a p-type graphene layer, an n-type graphene layer and an electrode, wherein the p-type graphene layer is arranged on the surface of one side of the neutral graphene layer, the n-type graphene layer is arranged onthe surface of the other side of the neutral graphene layer, and electrodes are arranged on the surface of the p-type graphene layer and the surface of the n-type graphene layer. According to the invention, the characteristics of the same material of graphene that the thermal expansion coefficient, the electron affinity, the band gap width and the lattice constant are the same are utilized; therefore, the complex interface problem generated by heterogeneous p-n junctions made of different materials and the problems of structural instability, low efficiency and the like of the heterogeneous p-n junctions are avoided, and meanwhile, the p-n junction structure has excellent flexibility and performance and can be used for structural design of flexible electronic devices and research and development of a high-performance miniaturized fine display technology.

Description

technical field [0001] The invention belongs to the technical field of microelectronic devices, and in particular relates to a graphene homogeneous p-n junction structure and a preparation method thereof. Background technique [0002] With the continuous improvement of the operating speed and performance requirements of microelectronic devices in various fields, new high-performance functional devices based on two-dimensional semiconductor materials have attracted more and more attention. The rapid response of microelectronic devices has become an important link and key direction to break through the current technical bottleneck. The most representative solid-state semiconductor device is the transistor, which acts as a variable switch. Transistors currently being researched or used are broadly classified into three categories: silicon-based thin film transistors, oxide thin film transistors, and organic thin film transistors. After years of development, the silicon-based ...

AI Technical Summary

Problems solved by technology

However, the p-n junction heterostructure composed of graphene and semiconductor materials will cause interface problems, which will affect the performance of microelectronic devices.

[0004] Although graphene itself exhibits excellent intrinsic properties, due to the influence of the substrate during preparation, the performance parameters obtained when doped with graphene are still quite different from the theoretical calculations.

In the process of preparing graphene by micromachining, it is necessary to transfer the prepared graphene to different substrates, but due to the different chemical properties of the two, a certain amount of charge transfer will occur, which will eventually cause doping effects and interface problems.

Images