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Solar cell

A technology of solar cells and batteries, which is applied in the field of solar cells, can solve problems such as the loss of conversion efficiency of solar cells, and achieve the effect of improving collection efficiency

Inactive Publication Date: 2020-05-12
YANGZHOU CHANGELIGHT
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

But in practice, choosing Zn-doped AlGaInP as the back field layer of the GaInP top cell often leads to a large loss in the conversion efficiency of the entire solar cell.

Method used

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Embodiment Construction

[0033] The following will clearly and completely describe the technical solutions in the embodiments of the application with reference to the drawings in the embodiments of the application. Apparently, the described embodiments are only some of the embodiments of the application, not all of them. Based on the embodiments in this application, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the scope of protection of this application.

[0034] In the following description, a lot of specific details are set forth in order to fully understand the application, but the application can also be implemented in other ways different from those described here, and those skilled in the art can do without violating the connotation of the application. By analogy, the present application is therefore not limited by the specific embodiments disclosed below.

[0035] As mentioned in the background technology section, choosing Zn-d...

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Abstract

The embodiment of the invention provides a solar cell. The solar cell comprises a bottom cell, a first tunneling junction layer, a back reflection layer, a middle cell, a second tunneling junction layer and a top cell, wherein the top cell comprises a top cell back field layer, a top cell base region, a top cell emitter region and a top cell window layer; the top cell back field layer comprises afirst back field layer and a second back field layer which are stacked. The band gaps of the first back field layer and the second back field layer are higher than the band gap of the top cell base region, so the reflection effect of photon-generated carriers is effectively exerted, the photon-generated carriers are transmitted to the top cell emitter region, and the collection efficiency of photon-generated carriers is improved. Moreover, the P-type doping concentration of the second back field layer is greater than the P-type doping concentration of the first back field layer and the top cell base region, so the resistivity of the top cell is effectively reduced, a drift field beneficial to photon-generated carrier collection is formed, the service life of minority carriers (namely electrons) can be prolonged, the short-circuit current density of the cell is further improved, and finally the conversion efficiency of the whole solar cell is improved.

Description

technical field [0001] The present application relates to the technical field of solar cells, in particular to a solar cell. Background technique [0002] Solar cells convert solar energy directly into electricity and are the most efficient form of clean energy. III-V compound semiconductor solar cells have the highest conversion efficiency in the current material system, and have the advantages of good high temperature resistance and strong radiation resistance. They are recognized as a new generation of high-performance and long-life space main power supplies. / Ge lattice-matched triple-junction cells have been widely used in the aerospace field. [0003] In a triple-junction cell with a GaInP / InGaAs / Ge lattice-matched structure, Zn-doped AlGaInP is generally used for the back field layer of the GaInP top cell. AlGaInP has a higher band gap than GaInP, so that the photogenerated carriers can be effectively utilized. The reflection effect improves the carrier collection e...

Claims

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Application Information

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IPC IPC(8): H01L31/0687H01L31/056H01L31/0352
CPCH01L31/035272H01L31/0687H01L31/056Y02E10/52Y02E10/544
Inventor 吴真龙张海林张策田宇
Owner YANGZHOU CHANGELIGHT
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