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Composite single crystal piezoelectric substrate film and preparation method thereof

A single crystal and substrate technology, which is applied in the manufacture of circuits, electrical components, semiconductors/solid-state devices, etc., can solve the problems of difficult and complete separation of thin films, low yield of single crystal thin films, and easy breakage of substrates, etc. Thermal separation, fast and complete separation, satisfying the effect of large-scale industrial production

Active Publication Date: 2020-05-08
JINAN JINGZHENG ELECTRONICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The purpose of the present invention is to provide a composite single crystal piezoelectric substrate film and its preparation method to solve the problems of low yield of single crystal film, easy breakage of the substrate and difficult complete separation of the film in the existing preparation method

Method used

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  • Composite single crystal piezoelectric substrate film and preparation method thereof
  • Composite single crystal piezoelectric substrate film and preparation method thereof
  • Composite single crystal piezoelectric substrate film and preparation method thereof

Examples

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preparation example Construction

[0035] A method for preparing a composite single crystal piezoelectric substrate film, such as figure 1 shown, including the following steps:

[0036] In step S110, a pre-single crystal wafer and a pre-substrate wafer are prepared;

[0037] The pre-single-crystal wafer is a semi-finished product obtained by polishing and cleaning the single-crystal wafer. Similarly, the pre-substrate wafer is also a semi-finished product with a smooth surface after polishing and cleaning. Among them, chemical mechanical polishing is used in the polishing process, and semiconductor RCA is used in the cleaning process to obtain a crystallized surface.

[0038] In step S120, an ion implantation process is performed on the pre-single-crystal wafer to obtain a single-crystal wafer implantation sheet, wherein the implantation parameters of the ion implantation are different at the center position and the edge position of the single-crystal wafer;

[0039] Implant parameters include implant dose an...

Embodiment 1

[0075] A method for preparing a composite single crystal piezoelectric substrate film, comprising the following steps:

[0076] ①Provide a 200μm silicon wafer and a 200μm lithium niobate wafer, respectively fix the silicon wafer or lithium niobate on the porous ceramic chuck of the polishing equipment, perform chemical mechanical polishing to obtain a smooth surface, and then polish the two wafers Perform semiconductor RCA cleaning to obtain a clean surface;

[0077] ②The lithium niobate wafer processed in step ① is implanted with He by ion implantation + , so that the lithium niobate wafer is sequentially divided into a separation layer, an implanted layer and a residual layer from the implanted surface, and the implanted ions are distributed in the implanted layer to obtain a single crystal wafer implanted sheet;

[0078] He was implanted by ion implantation + , adjust the implant dose parameters at the center and edge of the lithium niobate wafer, specifically:

[0079] ...

Embodiment 2

[0090] A method for preparing a composite single crystal piezoelectric substrate film, comprising the following steps:

[0091] ①Provide a 500μm silicon carbide wafer and a 500μm lithium tantalate wafer, respectively fix the silicon carbide wafer or lithium tantalate wafer on the porous ceramic chuck of the polishing equipment, perform chemical mechanical polishing to obtain a smooth surface, and then The two wafers are cleaned by semiconductor RCA to obtain a clean surface;

[0092] ②The lithium tantalate wafer processed in step ① was implanted with H + , the lithium tantalate wafer is sequentially divided into a separation layer, an implanted layer and a residual layer from the implanted surface, and the implanted ions are distributed in the implanted layer to obtain a single crystal wafer implanted sheet;

[0093] H was implanted by ion implantation + , adjust the temperature parameters at the center and edge of the lithium tantalate wafer, specifically:

[0094] The tem...

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Abstract

The invention discloses a composite single crystal piezoelectric substrate film and a preparation method thereof. The preparation method comprises the steps that when He+ or H+ is implanted into a polished and cleaned single crystal wafer through an ion implantation method, implantation dose parameters and / or temperature parameters of a center position and an edge position of the single crystal wafer are / is regulated and controlled, and a single crystal wafer implantation piece is obtained; the preparation method of the composite single crystal piezoelectric substrate film is simple and easy to implement, gluing pressurization or mechanical separation is not needed during annealing separation, and the problems of mechanical tearing and wafer scratching in the prior art can be avoided; thewafer obtained by adopting the preparation method is low in defect rate, the rate of finished products can reach 99% or above, and the rate of finished products in the prior art is generally 80% or below; and the preparation process for completely separating a lithium niobate / lithium tantalate thin film under the condition that a substrate is not broken can meet the requirements of large-scale industrial production, and has good economic benefits and social benefits.

Description

technical field [0001] The invention relates to the technical field of single crystal thin films, in particular to a compound single crystal piezoelectric substrate thin film and a preparation method thereof. Background technique [0002] Lithium niobate / lithium tantalate single crystal thin films prepared on silicon materials are widely used in acoustic wave devices, optical signal processing, information storage and electronic devices, and can be used to make filters and optical waveguide modulators , optical waveguide switches, spatial light modulators, optical frequency multipliers, surface acoustic wave generators, infrared detectors and ferroelectric memories, etc., have broad application prospects. [0003] The existing preparation process of lithium niobate / lithium tantalate single crystal thin film is to adopt the conventional ion implantation method to obtain a single crystal wafer injection sheet comprising a separation layer, an injection layer and a residual lay...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/265H01L21/18
CPCH01L21/265H01L21/185
Inventor 李真宇杨超胡文张秀全罗具廷
Owner JINAN JINGZHENG ELECTRONICS
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