Power semiconductor device cell structure, preparation method thereof and power semiconductor device

Abstract

The invention provides a power semiconductor device and a preparation method thereof. The power semiconductor device comprises a first conductive type substrate, first trench gates arranged in the substrate and distributed in a grid shape, island-shaped second trench gate which is positioned in each grid cell enclosed by the first trench gate, a second conduction type well region which is locatedin the substrate and located between the first trench gate and the second trench gate, a first conduction type first source region, a first conduction type second source region and a second conductiontype third source region, wherein the first conduction type first source region, the first conduction type second source region and the second conduction type third source region are located in the well region. The device further comprises an emitting electrode metal layer which is positioned above the substrate and is electrically connected with the first source region, the second source region,the third source region and the second trench gate at the same time. Under the condition that the distribution of electric field lines in the device is not changed, the current density is reduced byincreasing the distance between the effective trench gates. The anti-short-circuit capability of the device is improved. The electric field in the device can be improved, and the voltage endurance capability of the device is improved.

Description

technical field [0001] The present disclosure relates to the technical field of semiconductor devices, in particular to a cell structure of a power semiconductor device, a preparation method thereof, and a power semiconductor device. Background technique [0002] Power semiconductor devices, also known as power electronic devices, include power diodes, thyristors, insulated gate bipolar transistors (IGBTs), high-power power transistors (GTRs), gate turn-off thyristors (GTOs), and metal-oxide semiconductor field-effect transistors. (MOSFETs). Power semiconductor devices are widely used in various power control circuits, drive circuits and other circuits, especially in various variable frequency motors, photovoltaic inverters and smart grids, new energy vehicles, electric locomotive traction drives and other fields. [0003] Power semiconductor devices generally consist of a cell structure, a terminal withstand voltage structure, and a transition region structure. [0004] T...

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Problems solved by technology

However, this approach will have a greater impact on the distribution of electric field lines inside the device, affecting the electric field pinch-off

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