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Method for promoting biofilm culturing effect by modifying surface of polyurethane

A surface modification, polyurethane technology, applied in the field of water treatment, can solve the problems of lack of surface charge, unfavorable heterogeneous charge deposition, accelerated biofilm maturation, etc., to achieve the effect of promoting film hanging effect, abundant raw materials and low cost

Active Publication Date: 2020-05-05
XI'AN UNIVERSITY OF ARCHITECTURE AND TECHNOLOGY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] The technical problem to be solved by the present invention is to overcome the deficiencies of the traditional technology and provide a method for modifying the surface of polyurethane to promote the film-hanging effect. The method covers the surface of the material with iron and manganese ions after chemical oxidation pretreatment to solve the problem of material The lack of surface charge is not conducive to the deposition of heterogeneous charges on the surface, and iron element improves the metabolism and growth rate of microorganisms to a certain extent, and manganese element can also accelerate the maturation of biofilm

Method used

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  • Method for promoting biofilm culturing effect by modifying surface of polyurethane
  • Method for promoting biofilm culturing effect by modifying surface of polyurethane
  • Method for promoting biofilm culturing effect by modifying surface of polyurethane

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Effect test

Embodiment 1

[0049] The method for promoting the film-hanging effect to polyurethane surface modification of the present invention, comprises the steps:

[0050] (1) The preparation of adding 0.08mol / L ferrous sulfate heptahydrate solution to 0.008mol / L acidic potassium permanganate solution (volume ratio of concentrated sulfuric acid to deionized water is 1:499) at a volume ratio of 1:0.8 Obtain iron manganese salt solution.

[0051] (2) Take an appropriate amount of polyurethane sponge and immerse it in the iron-manganese salt solution, heat it in a water bath at 45°C for 1.5h, take it out, and wash it fully with 0.01mol / L PBS phosphate buffer solution until the washed solution is neutral. Naturally dry for later use;

[0052] (3) Place the processed material in step 2) in a low-temperature plasma processor, and adjust the gas volume to 18cm 3 / min, apply a power of 150W to generate plasma, and process 3min under this condition;

[0053] (4) Add the material treated in step 3) into a ...

Embodiment 2

[0057] The method for promoting the film-hanging effect to polyurethane surface modification of the present invention, comprises the steps:

[0058] (1) Add 0.12mol / L ferrous sulfate heptahydrate solution to 0.012mol / L acidic potassium permanganate solution (volume ratio of concentrated sulfuric acid to deionized water is 1:500) at a volume ratio of 1:1.2. Obtain iron manganese salt solution.

[0059] (2) Take an appropriate amount of polyurethane sponge and immerse it in the iron-manganese salt solution, heat it in a water bath at 55°C for 2.5 hours, take it out, and wash it fully with 0.05mol / L PBS phosphate buffer solution until the washed solution is neutral. Naturally dry for later use;

[0060] (3) Place the material processed in step (2) in a low-temperature plasma processor, and adjust the gas volume to 22cm 3 / min, apply a power of 200W to generate plasma, and process 7min under this condition;

[0061] (4) Add the material treated in step (3) into the sodium algin...

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Abstract

The invention discloses a method for promoting a biofilm culturing effect by modifying the surface of polyurethane. According to the method, polyurethane is used as a template material in a layer-by-layer self-assembly process; iron and manganese ions cover the surface of the material through pretreatment of an iron-manganese salt solution, so that the surface of the material has certain surface positive charges; and plasma grafting modification is carried out to generate a large number of active free radicals on the surface of the material, covalent reaction with sodium alginate is carried out, finally, a layer-by-layer self-assembly process is realized under the driving of electrostatic force between a polyanion compound sodium alginate and a polycation compound chitosan, and therefore,a stable layered composite structure is formed on the surface of the material. By chemically modifying the surface of polyurethane, the obtained plasma modified iron and manganese ion-sodium alginate-chitosan layer-by-layer self-assembly material is good in biocompatibility, high in chemical stability, safe, non-toxic, simple to operate, low in cost and easy to obtain. By using the method, the microorganism immobilization efficiency can be effectively improved.

Description

technical field [0001] The invention belongs to the technical field of water treatment, and in particular relates to a method for modifying the surface of polyurethane to promote the film-hanging effect. Background technique [0002] Microbial immobilization technology refers to the technology of immobilizing cells or enzymes on carriers by applying physical and chemical principles. The ideal immobilizable carrier in microbial immobilization technology needs to have the characteristics of stable performance, non-toxicity, long service life and low price. Common microbial immobilization methods include cross-linking, covalent binding, enveloping, adsorption, and embedding. [0003] Atmospheric Room Temperature Plasma, ARTP for short. A plasma jet with a high concentration of active particles (including helium atoms, oxygen atoms, nitrogen atoms, free radicals, etc. in an excited state) can be generated at atmospheric pressure at a temperature between 25-40°C. Since the pla...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C08J9/36C02F3/00C02F3/10C02F3/34C08L75/04
CPCC08J9/365C08J9/36C02F3/00C02F3/108C02F3/109C02F3/34C08J2375/04C08J2405/08C08J2405/04Y02W10/10
Inventor 孙昕张清宇王乐乔嘉保
Owner XI'AN UNIVERSITY OF ARCHITECTURE AND TECHNOLOGY
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