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Semiconductor device and method of making the same

A semiconductor and device technology, applied in the field of semiconductor devices and their preparation, can solve the problems of carrier mobility reduction, affecting device linearity, degradation, etc., and achieve the effect of improving interface scattering effect, improving linearity and reducing influence

Active Publication Date: 2022-07-29
DYNAX SEMICON
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The most important advantage of AlGaN / GaN HEMT (High Electron Mobility Transistor, High Electron Mobility Transistor) is that it is suitable for high-frequency, high-power microwave devices and has great application prospects. These extensive application prospects are mainly due to the With the increase of the dynamic range of the signal, the linearity requirements of the power amplifier in the base station circuit are also getting higher and higher, but the transconductance of the traditional AlGaN / GaN HEMT structure presents a typical peak characteristic, that is, the transconductance will be seriously damaged under high current. degraded, resulting in distorted signal transmission
Some studies have shown that: under high field, the scattering of the material interface will lead to the reduction of carrier mobility, thereby affecting the linearity of the device, and the speed of the change of the carrier concentration in the channel under the device gate with the gate voltage will also affect the device. linearity

Method used

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  • Semiconductor device and method of making the same
  • Semiconductor device and method of making the same
  • Semiconductor device and method of making the same

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Embodiment 1

[0046] In order to solve the above problems, embodiments of the present application provide a semiconductor device 10, such as image 3 As shown, the semiconductor device 10 includes a substrate 101 , a buffer layer 102 , a transition layer 104 , a channel layer 105 , a barrier layer 106 , a passivation layer 107 , a source electrode 108 , a gate electrode 109 and a drain electrode 110 .

[0047] In detail, the substrate 101 may be made of sapphire (Sapphire), silicon carbide (SiC), silicon (Si), lithium niobate, rare earth oxide or any other suitable material. Optionally, the substrate 101 may be made of silicon carbide with good heat dissipation properties.

[0048] The material of the buffer layer 102 can be nitride, specifically GaN or AlN or other nitrides, and the buffer layer 102 can be used to match the material of the base substrate 101 and the epitaxial transition layer 104 and the channel layer 105 .

[0049]Generally speaking, the semiconductor layer includes a ch...

Embodiment 2

[0055] In another embodiment, in order to improve the confinement of electrons in the channel, the linearity is further improved, such as Figure 5 As shown, the back barrier layer 103 is formed on the side of the transition layer 104 close to the substrate 101. In the embodiment of the present application, the back barrier layer 103 is formed between the transition layer 104 and the nitride buffer layer 102. The barrier layer 103 is used to increase the energy level difference between the transition layer 104 and the buffer layer 102, thereby forming a square-like electron moving channel with a certain width. The forbidden band width of the back barrier layer 103 is larger than that of the transition layer 104 . The back barrier layer 103 may be made of at least one of aluminum gallium nitride (AlGaN), aluminum nitride (AlN), gallium nitride (GaN), and other semiconductor materials. Because the back barrier layer 103 forms the sidewall of the energy band of the semiconductor...

Embodiment 3

[0058] Embodiments of the present application also provide a method for fabricating a semiconductor device, such as Figure 7 shown, including the following steps.

[0059] Step S101, providing a substrate.

[0060] Step S102, fabricating a buffer layer based on the substrate.

[0061] The embodiments of the present application do not limit the material of the substrate, and a buffer layer may be formed by depositing materials such as GaN or InGaN on the surface of the substrate.

[0062] Step S103, forming a transition layer on the side of the buffer layer away from the substrate.

[0063] In the embodiment of the present application, after the buffer layer is formed, gallium nitride or indium gallium nitride can also be deposited on the surface of the buffer layer to form a transition layer. The transition layer can be heavily doped with n-type, and its doping concentration can be greater than 1e17cm -3 .

[0064] Preferably, in step S104, before forming the transition l...

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Abstract

The invention provides a semiconductor device and a preparation method thereof, and relates to the technical field of semiconductors. The semiconductor device in the embodiment of the present invention modulates the electron concentration distribution of the traditional device by adjusting the epitaxial structure of the device, changes the traditional electron concentration peak position, and changes the electron concentration peak position in the semiconductor layer from the channel layer and the barrier layer. The interface moves to the direction of the transition layer, and the electron distribution functions in the semiconductor channel layer overlap, and more discrete energy levels that can be occupied by electrons are formed in the channel potential well, and finally expand into a class with a certain width. The square electron channel potential well effectively improves the linearity and other properties of the device.

Description

technical field [0001] The present invention relates to the technical field of semiconductors, and in particular, to a semiconductor device and a preparation method thereof. Background technique [0002] GaN (gallium nitride) semiconductor devices have significant advantages such as large band gap, high electron mobility, high breakdown field strength, and high temperature resistance. Compared with the first-generation semiconductor silicon and the second-generation semiconductor gallium arsenide, they are more suitable for The production of high temperature, high pressure, high frequency and high power electronic devices has broad application prospects. [0003] The most important advantage of AlGaN / GaN HEMT (High Electron Mobility Transistor, high electron mobility transistor) is that it is suitable for high-frequency, high-power microwave devices, and has great application prospects. As the dynamic range of the signal increases, the linearity requirements of the power am...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/778H01L21/335
CPCH01L29/778H01L29/66431
Inventor 张乃千刘健
Owner DYNAX SEMICON
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