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Plasma arc deposition device and method for diamond film

A technology of plasma and diamond film, applied in chemical instruments and methods, crystal growth, metal material coating technology, etc., can solve the problems of limited diamond size, rare natural diamond, containing catalyst impurities, etc., to eliminate uneven thickness, The effect of uniform plasma density and enlarged deposition area

Active Publication Date: 2020-04-14
UNIV OF SCI & TECH BEIJING
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] However, due to the scarcity of natural diamonds, the synthetic diamonds produced by high temperature and high pressure methods are limited in size and generally contain catalyst impurities.

Method used

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  • Plasma arc deposition device and method for diamond film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0030] Use a surface-treated conformal molybdenum substrate with a diameter of 150 mm, a circular depression at the center with a plane diameter of 100 mm and a center depth of 10 mm to prepare a diamond film in a plasma jet method with multi-level magnetic field control, and put the substrate in a vacuum The chamber is evacuated to an ultimate vacuum of 5×10 -1 Pa, gradually fill in argon gas to 5.2kPa, set the voltage of the stable arc magnetic field coil to 11.5V, set the voltage of the arc expansion magnetic field coil to 15V, set the voltage of the pilot arc magnetic field coil to 10V, and set the arc current of the plasma arc power supply to 135A , ignite the arc between the cathode and the anode, and fill in hydrogen gas (Ar:H 2 =0.8:1) Adjust the voltage of the stable arc magnetic field coil, the arc expanding magnetic field coil and the pilot arc magnetic field coil to make the arc rotate stably above the co-deposited substrate, increase the plasma arc power supply cu...

Embodiment 2

[0032] The diamond film is prepared in the plasma spraying method with multi-level magnetic field control on a conformal graphite substrate with a diameter of 180mm, a circular concave plane diameter of 140mm in the central position and a central depth of 12mm with a titanium transition layer surface treatment, and the substrate Put it into the vacuum chamber and pump it to the ultimate vacuum of 4.5×10 -1 Pa, gradually fill in argon gas to 4.2kPa, set the voltage of the stable arc magnetic field coil to 13.5V, set the voltage of the arc expansion magnetic field coil to 16V, set the voltage of the pilot arc magnetic field coil to 12V, and set the arc current of the plasma arc power supply to 125A , ignite the arc between the cathode and the anode, and fill in hydrogen gas (Ar:H 2 =0.8:1) Adjust the voltage of the stable arc magnetic field coil, the arc expanding magnetic field coil and the pilot arc magnetic field coil to make the arc rotate stably above the deposition substra...

Embodiment 3

[0034] Using a surface-treated conformal molybdenum substrate with a diameter of 180 mm, a central circular depression with a plane diameter of 140 mm, and a central depth of 12 mm, a diamond film was prepared in a plasma jet method with multi-level magnetic field control, and the substrate was placed in The vacuum chamber is pumped to an ultimate vacuum of 5×10 -1 Pa, gradually fill in argon gas to 5.2kPa, set the voltage of the stable arc magnetic field coil to 13.5V, set the voltage of the arc expansion magnetic field coil to 16V, set the voltage of the pilot arc magnetic field coil to 12V, and set the arc current of the plasma arc power supply to 130A , ignite the arc between the cathode and the anode, and fill in hydrogen gas (Ar:H 2 =0.8:1) Adjust the voltage of the stable arc magnetic field coil, the arc expanding magnetic field coil and the pilot arc magnetic field coil to make the arc rotate stably above the co-deposited substrate, increase the plasma arc power supply...

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Abstract

The invention discloses a plasma arc deposition device and method for a diamond film, and belongs to the technical field of diamond material preparation. A large-area conformal diamond film is deposited by adopting a direct-current arc plasma device with multi-stage magnetic field control; stable control on a rotating plasma arc is realized through a magnetic field generated by an arc-stabilizingmagnetic field coil; an extended arc coil further stabilizes the arc, and the extended rotating arc adapts to the size of a substrate, so that the large-area stable rotating guide of the arc to the substrate is realized. Meanwhile, a guide magnetic field coil at the bottom of the substrate realizes movement of the plasma arc towards the concave part of the substrate, and uniform deposition of diamonds on the surface of the conformal substrate is realized. Three magnetic field coils expand and guide the electric arc to enlarge the diamond deposition area while achieving generation and stabilization of the rotating electric arc, interference of anode carbon deposition on the electric arc is avoided, and long-term stable growth of a diamond film with a uniform thickness is achieved. The obtained conformal diamond film can be used as a heat sink or window material with high heat flux and rapid heat dissipation.

Description

technical field [0001] The invention belongs to the technical field of diamond material preparation, and relates to a diamond film plasma arc deposition device and method. Large-area conformal diamond film is deposited using a DC arc plasma device with multi-level magnetic field control: through the stable arc magnetic field coil, the extended arc magnetic field coil and the guided magnetic field coil, the generation and stabilization of the rotating arc during the DC arc plasma deposition diamond process is realized, At the same time, expanding and guiding the arc expands the diamond deposition area, avoids the interference of the arc caused by carbon deposition on the anode, and realizes the long-term stable growth of a large-sized conformal diamond film with uniform thickness. The obtained conformal diamond film can be correspondingly formed and processed to prepare high thermal conductivity devices, and realize rapid heat dissipation of high heat flux density devices or wi...

Claims

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Application Information

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IPC IPC(8): C30B25/02C30B29/04C23C16/27C23C16/513
CPCC23C16/276C23C16/513C30B25/02C30B29/04
Inventor 李成明郑宇亭欧阳晓平魏俊俊陈良贤刘金龙张建军
Owner UNIV OF SCI & TECH BEIJING
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