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Basal plate retainer for ECR (Equivalent Continuous Rating) plasma sputtering device

A technology of substrate holder and sputtering device, which is applied in sputtering plating, ion implantation plating, metal material coating process, etc., can solve the problems of affecting the area of ​​deposited film, occupying the cross-sectional area of ​​vacuum chamber, sample size limitation, etc. , to achieve the effects of low cost, increased area, and improved simple structure

Inactive Publication Date: 2010-09-15
XI AN JIAOTONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] At present, in the field of thin film preparation by ECR plasma sputtering, it is generally hoped that the plasma can be uniformly filled in the entire vacuum chamber, and a thin film with the largest area can be deposited on the substrate holder; however, in the existing ECR plasma sputtering device, the substrate holder In this method, a single-axis control baffle is set in front of the substrate holder. The baffle occupies the cross-sectional area of ​​the vacuum chamber, thereby affecting the area of ​​the deposited film, which limits the size of the sample on the substrate holder.

Method used

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  • Basal plate retainer for ECR (Equivalent Continuous Rating) plasma sputtering device
  • Basal plate retainer for ECR (Equivalent Continuous Rating) plasma sputtering device
  • Basal plate retainer for ECR (Equivalent Continuous Rating) plasma sputtering device

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Embodiment Construction

[0018] refer to figure 1 , is the vacuum chamber of the ECR plasma sputtering device, the vacuum chamber 1 includes: a left chamber 105 and a right chamber 103, a target frame 104 is arranged in the middle of the left chamber 105 and the right chamber 103, and the right chamber 103 is axially A cage flange 101 is arranged in the direction, and a molecular pump flange 102 is arranged in the radial direction.

[0019] combine figure 2 , image 3 , the substrate holder protrudes into the interior of the vacuum chamber 1 and is connected with the holder flange 101 provided on the right chamber 103 through the fixing flange 2 . The substrate holder of the present invention includes an original substrate 3, a fixed shaft 4 connected to the original substrate 3, a fixed flange 2 and a support plate 5 are arranged axially on the fixed shaft 4, and the support plate 5 and the fixed flange 2 run through The transmission shaft 6 parallel to the fixed shaft 4 is provided with a rotati...

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Abstract

The invention discloses a basal plate retainer for an ECR (Equivalent Continuous Rating) plasma sputtering device, comprising an original basal plate (3), a fixed shaft (4) connected with the original basal plate (3), a supporting plate (5) and a fixed flange (2) for connecting a vacuum chamber which are sequentially and axially arranged on the fixed shaft (4), wherein a driving shaft (6) parallel to the fixed shaft (4) passes through the supporting plate (5) and the fixed flange (2), and the outer end part of the driving shaft (6) is provided with a rotating handle(7). The basal plate retainer is characterized in that the original basal plate (3) is provided with an expanded basal plate (8), a driven shaft (9) passes vertically through the expanded basal plate (8), the driven shaft (9) and the driving shaft (6) are respectively provided with a gear, and the gears are meshed mutually, the inner end parts of the driven shaft (9) and the driving shaft (6) are respectively fixed with an upper baffle plate (12) and a lower baffle plate (13); and the driven shaft (9) passes through the position of the expanded basal plate (8) and is near to the periphery of the expanded basal plate (8).

Description

technical field [0001] The present invention relates to an electron cyclotron resonance (ECR) plasma sputtering device, in particular to a substrate holder for an ECR plasma sputtering device capable of increasing the area of ​​a sputtering substrate. Background technique [0002] ECR plasma sputtering processing technology has been widely used in various thin film processes due to its excellent performance in micro-nano structure composite, material surface processing and modification, element doping, etc., which has attracted the attention and research of many scholars. . ECR plasma sputtering processing technology originated from electron cyclotron resonance technology in the research of controllable nuclear fusion. When the frequency of electron cyclotron motion is equal to the frequency of microwave propagating along the magnetic field, resonance occurs. Under the action of magnetic field, the radius of electron cyclotron motion gradually increases. Large, the energy ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/34
Inventor 刁东风谢英杰蔡天骁
Owner XI AN JIAOTONG UNIV
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