Optical frequency response electron tunneling structure, preparation method and use thereof
A technology of electron tunneling and optical frequency, which is applied in the field of optical frequency response, can solve the problems of low optical frequency response efficiency and achieve the effects of reducing tunneling junction capacitance, enhancing absorption, and enhancing optical frequency response efficiency
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Embodiment 1
[0092] An optical frequency-responsive electron tunneling device using gold nanoribbons to enhance the electron tunneling process (for a schematic diagram of its structure, see figure 1 ):
[0093] In the structure of the optical frequency response electron tunneling device in this embodiment: the substrate 1 is SiO 2 The substrate, the electron tunneling tip 2 is a carbon nanotube with a diameter of 5 nm, the first substrate in the upper electrode 3 is an Au electrode, the nano-enhanced structure 4 is an Au nano-strip, and the in-plane lead 5 is an Al in-plane electrode. The collector 6 is a Keithley Naan ammeter, the external lead 7 is a Cu wire, the second substrate in the lower electrode 8 is the lower Au electrode, and the nano-tunneling layer 9 is Al 2 o 3 Nano tunneling layer;
[0094] Among them, Al 2 o 3 The thickness of the tunneling layer is 1 nanometer, the bow-tie optical antenna, the side length of a single regular triangle is 300nm, the diameter of the elec...
Embodiment 2
[0104] An optical frequency-responsive electron tunneling device using carbon nanotips to enhance the electron tunneling process:
[0105] The structure of the optical frequency response electron tunneling device in this embodiment is as follows image 3 As shown in the figure: substrate 1 is Al 2 o 3 The substrate, the electron tunneling tip 2 is a carbon nano tip, the first substrate in the upper electrode 3 is an upper Ag electrode, the nano-enhanced structure 4 is an Al nanoparticle, the in-plane lead 5 is an Au in-plane electrode, and the current detection and collector 6 It is a Keithley Naan ammeter, the external lead 7 is a Cu wire, the second substrate in the lower electrode 8 is a lower Ag electrode, and the nano-tunneling layer 9 is Al 2 o 3 Nanotunneling layer.
[0106] Among them, Al 2 o 3 The thickness of the tunneling layer is 5 nanometers, the diameter and length of the carbon nanometer tip are 1nm and 5 μm respectively, the characteristic size of the upp...
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