Optical frequency response electron tunneling structure as well as preparation method and application thereof
A technology of electron tunneling and optical frequency, applied in the field of optical frequency response, can solve the problem of low efficiency of optical frequency response
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Embodiment 1
[0092] An optical frequency-responsive electron tunneling device using gold nanoribbons to enhance the electron tunneling process (for a schematic diagram of its structure, see figure 1 ):
[0093] In the structure of the optical frequency response electron tunneling device in this embodiment: the substrate 1 is SiO 2 The substrate, the electron tunneling tip 2 is a carbon nanotube with a diameter of 5 nm, the first substrate in the upper electrode 3 is an Au electrode, the nano-enhanced structure 4 is an Au nano-strip, and the in-plane lead 5 is an Al in-plane electrode. The collector 6 is a Keithley Naan ammeter, the external lead 7 is a Cu wire, the second substrate in the lower electrode 8 is the lower Au electrode, and the nano-tunneling layer 9 is Al 2 o 3 Nano tunneling layer;
[0094] Among them, Al 2 o 3 The thickness of the tunneling layer is 1 nanometer, the bow-tie optical antenna, the side length of a single regular triangle is 300nm, the diameter of the elec...
Embodiment 2
[0104] An optical frequency-responsive electron tunneling device using carbon nanotips to enhance the electron tunneling process:
[0105] The structure of the optical frequency response electron tunneling device in this embodiment is as follows image 3 As shown in the figure: substrate 1 is Al 2 o 3 The substrate, the electron tunneling tip 2 is a carbon nano tip, the first substrate in the upper electrode 3 is an upper Ag electrode, the nano-enhanced structure 4 is an Al nanoparticle, the in-plane lead 5 is an Au in-plane electrode, and the current detection and collector 6 It is a Keithley Naan ammeter, the external lead 7 is a Cu wire, the second substrate in the lower electrode 8 is a lower Ag electrode, and the nano-tunneling layer 9 is Al 2 o 3 Nanotunneling layer.
[0106] Among them, Al 2 o 3 The thickness of the tunneling layer is 5 nanometers, the diameter and length of the carbon nanometer tip are 1nm and 5 μm respectively, the characteristic size of the upp...
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