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A p-type delafossite structure cusco 2 Crystal material and its preparation method and use

A technology of crystal material and delafossite, which is applied in the field of p-type delafossite structure CuScO2 crystal material and its preparation, can solve the problems of less crystal powder material preparation and performance research

Active Publication Date: 2021-05-11
WUHAN UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, domestic and foreign to CuScO 2 There are few research reports on materials, and most of them focus on CuScO 2 In terms of thin film materials, about CuScO 2 There are very few reports on the preparation and performance research of crystalline powder materials

Method used

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  • A p-type delafossite structure cusco <sub>2</sub> Crystal material and its preparation method and use
  • A p-type delafossite structure cusco <sub>2</sub> Crystal material and its preparation method and use
  • A p-type delafossite structure cusco <sub>2</sub> Crystal material and its preparation method and use

Examples

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Effect test

Embodiment 1

[0031] This embodiment provides an electrolytic water oxygen evolution catalyst delafossite structure CuScO 2 A crystal material and a preparation method thereof, comprising the steps of:

[0032] First prepare the reaction precursor (or hydrothermal reaction precursor): the Cu(NO 3 ) 2 and Sc(NO 3 ) 3 According to the molar ratio of 1:1, add to the reaction solution, stir with a magnetic stirrer for 10 to 15 minutes to dissolve, then add Cu(NO 3 ) 2 NaOH with 10 times the molar number is used as a mineralizer, and finally 0.5 ml of ethylene glycol is added, and the stirring is continued for 10 to 15 minutes until it is completely dissolved to obtain a reaction precursor.

[0033] The above reaction precursor was transferred to a hydrothermal reactor (generally polytetrafluoroethylene), the resistivity of deionized water was 18.24MΩ·cm (25°C), and the filling rate was about 70%. After sealing the kettle body, place it in a programmed temperature-controlled oven for hydro...

Embodiment 2

[0036] This embodiment provides an electrolytic water oxygen evolution catalyst delafossite structure CuScO 2 A crystal material and a preparation method thereof, comprising the steps of:

[0037] First prepare the reaction precursor (or hydrothermal reaction precursor): the Cu(NO 3 ) 2 and Sc(NO 3 ) 3 According to the molar ratio of 1.5:1, add to the reaction solution, stir for 10 to 15 minutes with a magnetic stirrer to dissolve, then add Cu(NO 3 ) 2 NaOH with 10 times the number of moles is used as a mineralizer, and finally 1.0 ml of ethylene glycol is added, and the stirring is continued for 10 to 15 minutes until it is completely dissolved to obtain a reaction precursor.

[0038] The above reaction precursor was transferred to a hydrothermal reactor (generally polytetrafluoroethylene), the resistivity of deionized water was 18.24MΩ·cm (25°C), and the filling rate was about 65%. After sealing the kettle body, place it in a programmed temperature-controlled oven for ...

Embodiment 3

[0041] This embodiment provides an electrolytic water oxygen evolution catalyst delafossite structure CuScO 2 A crystal material and a preparation method thereof, comprising the steps of:

[0042] First prepare the reaction precursor (or hydrothermal reaction precursor): the Cu(NO 3 ) 2 and Sc(NO 3 ) 3 According to the molar ratio of 1.25:1, add to the reaction solution, stir with a magnetic stirrer for 10 to 15 minutes to dissolve, then add Cu(NO 3 ) 2 NaOH with 6 times the molar number is used as a mineralizer, and finally 1.0 ml of ethylene glycol is added, and the stirring is continued for 10 to 15 minutes until it is completely dissolved to obtain a reaction precursor.

[0043] The above reaction precursor was transferred to a hydrothermal reactor (generally polytetrafluoroethylene), the deionized water resistivity was 18.24MΩ·cm (25°C), and the filling rate was about 75%. After sealing the kettle body, place it in a programmed temperature-controlled oven for hydrot...

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Abstract

The invention discloses a p-type delafossite structure CuScO 2 Crystal material and its preparation method and application, the method comprises: step 1, preparation of reaction precursor: with Cu 2+ Source reactants and Sc 3+ The source reactant is used as the raw material, deionized water is used as the reaction liquid, and the reducing agent and mineralizing agent are added and stirred until completely dissolved to prepare the reaction precursor; step 2, the reaction precursor is subjected to hydrothermal treatment at 210-240°C After reacting for 12 to 48 hours, the reaction product was centrifuged to obtain a precipitate, and the precipitate was dried to obtain the p-type delafossite structure CuScO 2 crystal material. The present invention utilizes the single reaction of hydrothermal method to prepare gram-level CuScO 2 Crystal material, no need to adjust the pH value of the precursor reactant; and the present invention explores CuScO for the first time 2 As a catalyst material in electrolytic water oxygen evolution, it shows good electrolytic water oxygen evolution activity and stability under alkaline conditions.

Description

technical field [0001] The invention relates to the technical field of synthesis and preparation of nanomaterials, in particular to a p-type delafossite structure CuScO 2 Crystal material and its preparation method and use. Background technique [0002] Transparent conducting oxide (Transparent conducting oxide, TCO) materials are widely used in flat panel displays, solar photovoltaic cells, transparent electrodes of touch screens, special function window coatings and other thin film optoelectronics due to their high electrical conductivity and good optical transparency. devices and other fields. However, the TCO materials widely researched and applied at present are basically n-type semiconductors, such as SnO 2 、In 2 o 3 and ZnO et al. If p-type transparent conductive materials with excellent performance can be prepared, active devices such as transparent p-n junctions and transparent FETs can be fabricated, and even transparent circuits can be realized. Therefore, t...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C01G3/00B01J23/83H01G9/20H01L51/44H01L51/46
CPCC01G3/00B01J23/83B01J23/002B01J35/0033H01G9/2027C01P2002/72C01P2004/03B01J2523/00H10K30/82H10K2102/101B01J2523/17B01J2523/35B01J2523/847Y02E10/549Y02E10/542
Inventor 熊德华邓砚文赵修建
Owner WUHAN UNIV OF TECH
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