Functional gel as well as preparation method and application thereof

Abstract

The invention provides a preparation method of functional gel, which comprises the following steps: mixing functional filler with liquid metal to obtain a mixture; providing a gel substrate, and forming a prefabricated pattern layer on the surface of the gel substrate by taking the mixture as a raw material, with the prefabricated pattern layer comprising a sacrificial layer and a functional filler dispersed in the sacrificial layer, and the sacrificial layer comprising an oxide of a liquid metal; providing an etching solution, enabling the etching solution to react with the sacrificial layerto remove the sacrificial layer, enabling the functional filler to be deposited on the surface of the gel substrate to form a pattern layer, and obtaining the functional gel. The invention further provides the functional gel and application, due to the fact that the viscosity of the oxide of the liquid metal is large, the liquid metal can be stably attached to the surface of the gel substrate, then the sacrificial layer is consumed, conformal deposition of the functional filler on the surface of the gel substrate is achieved, and the functional gel with the stable structure is obtained. The preparation method can overcome the difficulty that the gel substrate cannot be patterned through a common semiconductor means.

Description

technical field [0001] The invention relates to the technical field of flexible electronics, in particular to a functional gel, its preparation method and application. Background technique [0002] The gel substrate (Hydrogel) has a three-dimensional network structure, which can rapidly swell and not dissolve in the dispersion medium. Due to the existence of the cross-linked network, the gel substrate can swell and retain a large amount of dispersion medium, and the absorption of the dispersion medium is related to the concentration of the gel. The degree of cross-linking of the adhesive substrate is closely related. Generally, the higher the degree of cross-linking of the gel substrate, the lower the retention of the dispersion medium. The aggregation state of the gel substrate is neither completely solid nor completely liquid. The behavior of the solid state is that it can maintain a certain shape and volume under certain conditions and has a certain mechanical strength. ...

AI Technical Summary

Problems solved by technology

[0003] Traditional semiconductor methods are not suitable for patterning on the surface of gel substrates. Because gel substrate materials are not resistant to high temperatures, they are prone to dehydration and deformation and shrinkage when encountering high temperatures. Most semiconductor methods require high-temperature treatment, which will lead to gel substrates The surface structure and geometry of the substrate material change, therefore, how to effectively pattern the surface of the gel substrate material without affecting the gel substrate material is a technical problem that needs to be solved urgently

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