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A kind of femocrcby phase change film, preparation method and 3D simulation transient heat distribution method

A transient thermal, 3D technology, applied in design optimization/simulation, calculation, electrical components, etc., to achieve the effect of high resolution, high resolution and simplified application

Active Publication Date: 2021-05-11
HUAZHONG UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

And there is no systematic method for 3D simulation of transient heat distribution in phase change films in the prior art

Method used

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  • A kind of femocrcby phase change film, preparation method and 3D simulation transient heat distribution method
  • A kind of femocrcby phase change film, preparation method and 3D simulation transient heat distribution method
  • A kind of femocrcby phase change film, preparation method and 3D simulation transient heat distribution method

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preparation example Construction

[0033] A kind of preparation method of FeMoCrCBY phase-change film of the present invention, comprises the steps:

[0034] Grinding the FeMoCrCBY target to remove the surface oxide layer;

[0035] Then place the FeMoCrCBY target on the DC sputtering target holder of the sputtering chamber, and place the quartz glass substrate to be sputtered on the sample tray of the sputtering chamber;

[0036] Vacuum the sputtering chamber, the vacuum degree is between 1*10-4 Pa~1*10-5Pa;

[0037] Set the condition parameters in the sputtering process, including argon pressure, argon pressure flow rate, sputtering power and target distance, and prepare FeMoCrCBY film by sputtering inside the sputtering chamber through DC magnetron, and the sputtering power is 40W~100W, The flow rate of the argon pressure is 10sccm-60sccm, the sputtering argon pressure is 0.3Pa-0.7Pa, and the target distance is 60cm-120cm.

[0038]Specifically, the sputtering power is set to 40W to 100W. Since the FeMoCrCBY...

Embodiment 1

[0049] A kind of preparation method of FeMoCrCBY phase-change thin film of the present invention, in the present embodiment, selects Fe48Mo14Cr15C15B6Y2 as phase-change material, and its step of preparing phase-change thin film operates as follows:

[0050] S1: Grinding the Fe48Mo14Cr15C15B6Y2 target to remove the surface oxide layer;

[0051] S2: Place the Fe48Mo14Cr15C15B6Y2 target on the DC sputtering target holder of the sputtering chamber, and place the sample to be sputtered on the sample tray of the sputtering chamber;

[0052] S3: Vacuumize the sputtering chamber at 1*10-5Pa;

[0053] S4: Set the condition parameters in the sputtering process, including argon pressure, argon pressure flow rate, sputtering power and target distance, and prepare a Fe48Mo14Cr15C15B6Y2 film in the sputtering chamber by DC magnetron, and the sputtering power is 100W, The flow rate of argon pressure is 30 sccm, the sputtering argon pressure is 0.5 Pa, and the distance between targets is 60 ...

Embodiment 2

[0061] A kind of preparation method of FeMoCrCBY phase-change thin film of the present invention, in the present embodiment, selects Fe48Mo14Cr15C15B6Y2 as phase-change material, and its step of preparing phase-change thin film operates as follows:

[0062] S1: Grinding the Fe48Mo14Cr15C15B6Y2 target to remove the surface oxide layer;

[0063] S2: Place the Fe48Mo14Cr15C15B6Y2 target on the DC sputtering target holder of the sputtering chamber, and place the sample to be sputtered on the sample tray of the sputtering chamber;

[0064] S3: Vacuum the sputtering chamber, the vacuum is 1*10-4Pa;

[0065] S4: Set the condition parameters in the sputtering process, including argon pressure, argon pressure flow rate, sputtering power and target distance, and prepare Fe48Mo14Cr15C15B6Y2 film by sputtering in the sputtering cavity through DC magnetron, and the sputtering power is 40W, The flow rate of the argon pressure is 10 sccm, the sputtering argon pressure is 0.7 Pa, and the tar...

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Abstract

The invention discloses a preparation method of a FeMoCrCBY phase change film, comprising the following steps: S1: grinding a FeMoCrCBY target material to remove the surface oxide layer; S2: placing the FeMoCrCBY target material on a DC sputtering target holder , place the sample to be sputtered on the sample tray; S3: Evacuate the sputtering chamber, and the vacuum degree is between 1*10-4Pa ~ 1*10-5Pa; S4: use DC magnetron in the sputtering chamber The FeMoCrCBY film is prepared by sputtering inside the sputtering cavity, the target spacing is set to 60cm-120cm, and the sputtering argon pressure, argon pressure flow and sputtering power are set, wherein the sputtering power is 40W-100W. The invention also discloses a FeMoCrCBY phase change film and a method for 3D simulating transient heat distribution in the FeMoCrCBY phase change film. The FeMoCrCBY phase change film of the present invention has high resolution. The present invention improves the preparation method of the phase change film by aiming at the phase change material, and simplifies the application of the FeMoCrCBY phase change film in the phase change lithography by using a 3D model. Follow-up research to pave the way.

Description

technical field [0001] The invention belongs to the technical field of laser phase change lithography, and more specifically relates to a FeMoCrCBY phase change film, a preparation method and 3D simulated transient heat distribution. Background technique [0002] Phase-change memory (PCRAM) is a non-volatile semiconductor memory that has emerged in recent years. Its basic principle is to use electrical pulse signals to act on the device storage unit to make the phase-change material reversible between the amorphous state and the crystalline state. When the material is amorphous, it corresponds to a high resistance value, when it is in a crystalline state, it corresponds to a low resistance value, and the high and low resistance values ​​correspond to the logic data "0" and "1" respectively. Compared with traditional memory, it has the advantages of fast read and write speed, low power consumption, high storage density, compatibility with traditional CMOS process, and simple ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L45/00G06F30/23G06F119/08
CPCH10N70/881H10N70/231H10N70/026
Inventor 何超缪向水
Owner HUAZHONG UNIV OF SCI & TECH
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