P-type laminated graded band gap silicon quantum dot multilayer film, preparation method and application thereof

Abstract

The invention discloses a p-type laminated graded band gap silicon quantum dot multilayer film, a preparation method and application thereof, and belongs to the field of photoelectric technology. Thep-type laminated graded band gap silicon quantum dot multilayer film includes six silicon quantum dot films, wherein every two silicon quantum dot films have the same thickness, the silicon quantum dot films of the same thickness specification are adjacent to each other, and adjacent silicon carbide films have one silicon quantum dot film therebetween. The preparation method comprises: growing a p-type laminated graded band gap silicon quantum dot multilayer film on an n-type silicon substrate 2 and an n-type silicon nanowire 3 by a plasma enhanced vapor deposition process. In this application, the p-type laminated graded band gap silicon quantum dot multilayer film is used to prepare a solar cell, which includes an Al electrode layer, an n-type silicon substrate, an n-type silicon nanowire, and a p-type laminated graded band gap silicon quantum dot multilayer film, a graphene layer and an Au electrode layer which are successively stacked. The graded band gap of the laminated silicon quantum dot multilayer film is configured to expand a light response range in an absorption layer so as to improve the photoelectric performance of a device.

Description

technical field [0001] The invention relates to a p-type laminated silicon quantum dot multilayer film with a gradual band gap and a preparation method and application thereof, belonging to the field of optoelectronic technology. Background technique [0002] With the continuous development of a new generation of solar cells, the nano-silicon structure is considered to be a material that can better adjust the band gap to achieve a wide spectral response. Among them, the heterojunction composed of a nano-silicon structure and a single crystal silicon substrate Solar cells have always been a research hotspot of widespread concern. However, on the one hand, due to the relatively small thickness of the active layer, the light absorption efficiency is relatively low. As a result, the photoelectric conversion efficiency of nano-silicon-monocrystalline silicon heterojunction solar cells is relatively low (5-6%). On the other hand, increasing the thickness of the active layer will...

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Problems solved by technology

However, on the one hand, due to the relatively small thickness of the active layer, the light absorption efficiency is relatively low.

As a result, the photoelectric conversion efficiency of nano-silicon-monocrystalline silicon heterojunction solar cells is relatively low (5-6%)

On the other hand, increasing the thickness of the active layer will introduce more surface states and defect states into the device, resulting in a decrease in device performance

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