IGBT driving module

Abstract

The invention relates to the technical field of insulated gate bipolar transistors. and discloses an IGBT driving module. The module comprises a bottom plate. An upper surface of the bottom plate is fixedly connected with the bottom of a packaging shell. An IGBT driving chip is arranged in the packaging shell. The bottom of the IGBT driving chip is contact with the upper surface of the bottom plate, the bottom plate and the packaging shell are each provided with a plurality of sets of fixing holes, the centers of the fixing holes in the surface of the bottom plate and the centers of the fixingholes in the surface of the packaging shell are located on the same vertical axis, and a fixing base is installed at the top of the packaging shell. A contact piece and a pressing piece are wrapped by the isolation seat and the fixed seat. Moreover, the isolation seat prevents an operator from being in contact with the contact piece and the pressing piece, thereby enabling the probability that the IGBT driving module is broken down and damaged by static electricity during the wiring operation to be reduced, improving the use safety and stability of the IGBT driving module, and reducing the damage to the IGBT driving module caused by the wrong conduction of the contact piece.

Description

technical field [0001] The invention relates to the technical field of insulated gate bipolar transistors, in particular to an IGBT drive module. Background technique [0002] The Chinese name of IGBT is Insulated Gate Bipolar Transistor, which is a composite fully-controlled voltage-driven power semiconductor device composed of BJT (Bipolar Transistor) and MOS (Insulated Gate Field Effect Transistor), with high input impedance and Due to the advantages of low conduction voltage drop, IGBT is very suitable for the conversion system with a DC voltage of 600V and above, such as AC motors, frequency converters, switching power supplies, lighting circuits, traction drives, etc., because the gate of the IGBT drive module An oxide film is electrically isolated from the emitter, and the oxide film is very thin, and its breakdown voltage generally reaches 20-30V. Therefore, gate breakdown caused by static electricity is one of the common causes of IGBT failure. A general IGBT drive...

AI Technical Summary

Problems solved by technology

[0004] Aiming at the deficiencies of the prior art, the present invention provides an IGBT drive module, which has the advantages that the wiring terminals are not easy to be accidentally touched or turned on, and the operator does not need to touch the terminals with his hands during the wiring operation, which solves the problem of IGBT in the current market. When the driver module is wiring, the operator is more likely to accidentally touch the terminal and generate static electricity to break down the chip, and the terminal is exposed outside the package shell, which is more likely to be misconducted and damage the chip.

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