A segmented asymmetric thyristor electrostatic discharge device with embedded p+ implantation zone

Abstract

The invention discloses a segmented type asymmetric silicon controlled rectifier electrostatic discharge device embedded with P+ injection regions. The device is characterized in that, to begin with,a floating P+ injection region is added into a shallow P well, so that the width and concentration of a base electrode of a transverse parasitic NPN transistor are increased, the amplification times of the transverse parasitic NPN transistor is reduced, static electricity tends to be discharged from a longitudinal parasitic NPN transistor, a current path becomes deeper and longer, and the maintaining voltage of the device can be effectively improved; then, the P+ injection region used for ohmic contact of the shallow P well adopts a segmented structure, so that the parasitic resistance of theshallow P well is increased; and meanwhile, an N+injection region adopts a comb-shaped structure, so that the emitter area of a parasitic triode can be increased, the emission efficiency can be improved, and the failure current of the device can be effectively improved. The silicon controlled rectifier electrostatic discharge device has the characteristics of high maintaining voltage and high failure current, and can realize a high protection level while effectively avoiding a latch-up effect.

Description

technical field [0001] The invention relates to the field of electrostatic protection, in particular to a segmented asymmetric thyristor electrostatic discharge device embedded in a P+ injection area. Background technique [0002] Electro-Static Discharge (ESD) is an inevitable phenomenon in the process of manufacturing, packaging, testing, transportation, assembly and use of integrated circuits. There are internal and external reasons for the generation of static discharge points. Static electricity accounts for 58% of the various reasons for the failure of integrated circuits, which poses a serious threat to the reliability of integrated circuits. There are two ways to protect integrated circuits from static electricity: one is to control and reduce the occurrence of static electricity and discharge, such as using electrostatic protective clothing, anti-static wrist straps, etc.; the other is to design static discharge devices around the chip to provide static discharge. ...

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Problems solved by technology

Often the higher the maintenance voltage of the device, the failure current will drop

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