Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Texturing cleaning method and heterojunction battery

A technology of texturing and silicon wafers, applied in circuits, photovoltaic power generation, electrical components, etc., can solve problems such as poor texture quality, and achieve the effect of stable ozone concentration and low chemical cost

Inactive Publication Date: 2020-02-21
CHANGZHOU S C EXACT EQUIP +1
View PDF0 Cites 4 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] In order to solve the defect of poor suede quality in the existing process, the present invention proposes a suede cleaning method and a heterojunction battery, which has the advantages of low cost, good suede consistency, and more environmental protection

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Texturing cleaning method and heterojunction battery

Examples

Experimental program
Comparison scheme
Effect test

Embodiment approach

[0042] Then the silicon wafer is oxidatively cleaned, the silicon wafer is soaked in an oxidative cleaning solution, and the cleaning solution reacts with the surface of the silicon wafer to form a uniform oxide layer of about 10 angstroms on the surface of the silicon wafer again. Specifically, there are two implementations for oxidative cleaning of silicon wafers. The first implementation includes: oxidative cleaning of silicon wafers with a mixed solution containing ozone and hydrochloric acid, and the concentration of ozone in the mixed solution containing ozone and hydrochloric acid The concentration of hydrochloric acid is 10-20PPM, the concentration of hydrochloric acid is 0.01%-0.5, the balance is deionized water, the temperature of the mixed solution is room temperature, and the reaction time is 90-180s.

[0043] The second embodiment includes: performing oxidative cleaning on the silicon wafer with a mixed solution containing potassium hydroxide and hydrogen peroxide,...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
conversion efficiencyaaaaaaaaaa
Login to View More

Abstract

The invention discloses a texturing cleaning method and a heterojunction battery. The texturing cleaning method comprises the following steps of 1, using a mixed solution containing ozone to preprocess a silicon wafer, and generating an oxidation layer where pollutants are attached on a surface of the silicon wafer in a preprocessing process; 2, removing the oxide layer on the surface of the silicon wafer through an alkali liquor; 3, carrying out oxidative cleaning on the silicon wafer after water washing, and generating an oxide layer on the surface of the silicon wafer again in a cleaning process; 4, texturing the silicon wafer through the alkali liquor; 5, washing the silicon wafer for at least one time; 6, decontaminating the silicon wafer by using the alkali liquor containing hydrogenperoxide; 7, after water washing, carrying out rounding treatment on the surface of the silicon wafer by using an ozone-containing acid solution; 8, carrying out acid washing on the silicon wafer after the water washing; and 9, drying the silicon wafer after the water washing. The method has advantages of low cost, good suede consistency, environmental protection and the like.

Description

technical field [0001] The invention relates to the technical field of solar photovoltaic cells, in particular to a cleaning method for making texture and a heterojunction cell. Background technique [0002] Heterojunction cells are a type of high-efficiency photovoltaic solar cells. Compared with traditional crystalline silicon photovoltaic solar cells, heterojunction cells are more and more popular in the market because of their higher conversion efficiency. However, heterojunction cells have relatively high requirements for each process in the manufacturing process, specifically referring to cleanliness requirements, suede requirements, film layer requirements, etc. The conversion efficiency of heterojunction cells is above 23.5%. The first process in the process is texturing cleaning, which is different from conventional texturing cleaning. The texturing cleaning process of heterojunction cells is more complicated. The existing heterojunction texturing cleaning technolog...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/02H01L31/18H01L31/0236H01L31/072
CPCH01L21/02057H01L21/02082H01L31/1804H01L31/02363H01L31/072Y02E10/50Y02P70/50
Inventor 左国军任金枝
Owner CHANGZHOU S C EXACT EQUIP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com